2SD1368
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
100
50
6
1
1.5
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
100
50
6
—
—
100
—
—
—
—
CC
250 to 500
Typ
—
—
—
—
—
—
—
—
100
20
Max
—
—
—
0.1
0.1
500
0.3
1.2
—
—
V
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 80 V, I
E
= 0
V
EB
= 4 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1 A
I
C
= 1 A, I
B
= 0.1 A, Pulse
I
C
= 1 A, I
B
= 0.1 A, Pulse
V
CE
= 2 V, I
C
= 10 mA, Pulse
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Mark
h
FE
CA
100 to 200
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
f
T
Cob
CB
160 to 200
1. The 2SD1368 is grouped by h
FE
as follows.
See characteristic curves of 2SD789.
2
Cautions
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