Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s
Features
q
q
q
q
q
Unit: mm
2.4±0.2 2.0±0.2 3.5±0.1
High collector to base voltage V
CBO
.
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(Ta=25˚C)
Ratings
400
600
400
500
5
1
500
1
150
–55 ~ +150
Unit
6.9±0.1
1.5
0.4
2.5±0.1
1.0
1.0
1.5 R0.9
R0.9
1.0±0.1
0.85
Parameter
Collector to
base voltage
Collector to
2SD1350
2SD1350A
2SD1350
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
0.55±0.1
0.45±0.05
1.25±0.05
V
3
2
1
emitter voltage 2SD1350A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
V
A
mA
W
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
EIAJ:SC–71
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector to base
voltage
Collector to emitter
voltage
2SD1350
2SD1350A
2SD1350
2SD1350A
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
f
t
stg
Conditions
I
C
= 100µA, I
E
= 0
I
C
= 500µA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 250mA, I
B
= 50mA
*
I
C
= 250mA, I
B
= 50mA
*
V
CB
= 30V, I
E
= –20mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= –10mA
0.4
1.0
0.7
1.0
3.6
4.0
*
min
400
600
400
500
5
30
typ
max
4.1±0.2
s
Absolute Maximum Ratings
R
0.
4.5±0.1
7
Unit
V
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
1.5
1.5
55
7
V
V
MHz
pF
µs
µs
µs
Fall time
Storage time
Pulse measurement
1
Transistor
P
C
— Ta
1.6
120
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
100
2SD1350, 2SD1350A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=5
Collector power dissipation P
C
(W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
Collector current I
C
(mA)
80
I
B
=1.0mA
60
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0
2
4
6
8
10
12
40
20
0
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=5
120
V
CE
=5V
60
f
T
— I
E
V
CB
=30V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
100
Transition frequency f
T
(MHz)
100
300
1000
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
50
80
40
60
Ta=75˚C
25˚C
30
40
–25˚C
20
20
10
0
1
3
10
30
0
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(A)
C
ob
— V
CB
30
Collector output capacitance C
ob
(pF)
25
I
E
=0
f=1MHz
Ta=25˚C
20
15
10
5
0
10
30
100
300
1000
Collector to base voltage V
CB
(V)
2
Microcontroller MCU
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