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2SD1366A

Description
Silicon NPN Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD1366A Overview

Silicon NPN Epitaxial

2SD1366A Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)85
JESD-30 codeR-PSSO-F3
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Nominal transition frequency (fT)190 MHz
Base Number Matches1
2SD1366A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
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