2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
!Features
1) High V
CEO
, V
CEO
=80V
2) High I
C
, I
C
=1A (DC)
3) Good h
FE
linearity
4) Low V
CE
(sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!External
dimensions
(Units : mm)
2SD1898
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
4.0±0.3
2.5
+0.2
−0.1
(1)
1.0±0.2
(2)
(3)
0.4±0.1
1.5±0.1
0.4
+0.1
−0.05
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
!Structure
Epitaxial planer type
NPN silicon transistor
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : DF
(1) Base
(2) Collector
(3) Emitter
2SD1733
1.5
±
0.3
2SD1768S
4±0.2
2±0.2
3±0.2
5.5
+
0.3
−
0.1
9.5
±
0.5
(15Min.)
0.9
1.5
0.75
0.9
0.65
±
0.1
2.5
0.45
+0.15
−0.05
3Min.
6.5
±
0.2
5.1
+
0.2
−
0.1
C0.5
2.3
+
0.2
−
0.1
0.5
±
0.1
0.55
±
0.1
2.3
±
0.2 2.3
±
0.2
1.0
±
0.2
5
2.5
+0.4
−0.1
0.5
0.45
+0.15
−0.05
(1) (2) (3)
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
6.8±0.2
2.5±0.2
2SD1381F
7.8±0.2
Front
φ
3.3
3.2±0.2
10.8±0.2
4.4±0.2
Back
φ
3.19
0.9
1.2
1.0
1.6
1.1
6.9
9.2
C0.7
0.65Max.
0.95
14.5±0.5
16.0±0.5
1.75
0.8
0.5±0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45±0.1
2.3±0.5
2.3±0.5
0.7±0.1
1.76±0.5
(1) (2) (3)
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
ROHM : TO-126FP
(1) Emitter
(2) Collector
(3) Base
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Absolute
maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
100
80
5
1
2
0.5
2SD1898
2
1
P
C
10
0.3
1
1.2
2SD1381F
Junction temperature
Storage temperature
Tj
Tstg
5
150
−55∼+150
2
Unit
V
V
V
A (DC)
A (Pulse)
∗
1
W
∗
3
2SD1733
Collector power
dissipation
2SD1768S
2SD1863
W (Tc=25˚C)
W
∗
2
W (Tc=25˚C)
˚C
˚C
∗
1 Pw=20ms, duty=1 / 2
∗
2 Printed circuit board 1.7mm thick, collector copper plating 1cm
∗
3 When mounted on a 40×40×0.7mm ceramic board.
or larger.
!Electrical
characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
2SD1863
2SD1733, 2SD1898
DC current
transfer ratio 2SD1768S
2SD1381F
Collector-emitter saturation voltage
Transition frequency
Output capacitance
V
CE(sat)
f
T
Cob
h
FE
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
100
80
5
−
−
180
82
120
82
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
0.15
100
20
Max.
−
−
−
1
1
390
390
390
270
0.4
−
−
Unit
V
V
V
µA
µA
−
−
−
−
V
MHz
pF
I
C
/I
B
=500mA/20mA
V
CE
=10V,
I
E
=−50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
V
CE
=3V,
I
C
=0.5A
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=80V
V
EB
=4V
Conditions
∗
*
Measured using pulse current
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Packaging
specifications and h
FE
Package
Code
Type
2SD1898
2SD1733
2SD1768S
2SD1863
2SD1381F
h
FE
PQR
PQR
QR
R
PQ
−
−
−
−
−
−
−
−
−
−
Basic ordering unit (pieces)
T100
1000
Taping
TL
2500
−
TP
5000
−
−
TV2
2500
−
−
−
Bulk
−
2000
−
−
−
−
h
FE
values are classified as follows :
Item
h
FE
P
82~180
Q
120~270
R
180~390
!Electrical
characteristic curves
1000
COLLECTOR CURRENT : I
C
(mA)
Ta=25˚C
V
CE
=5V
COLLECTOR CURRENT : I
C
(
A)
Ta=25˚C
1.0
0.8
0.6
0.4
1mA
0.2
0
0
I
B
=0mA
10
6mA
5mA
4mA
3mA
2mA
DC CURRENT GAIN : h
FE
Ta=25˚C
100
1000
V
CE
=3V
1V
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : V
BE
(V)
2
4
6
8
0
0
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
TRANSITION FREQUENCY : f
T
(MHz)
500
200
100
50
20
10
5
2
1
2
5
10
20
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
10
100
1000
I
C
/I
B
=20/1
10/1
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
Ta=25˚C
Ta=25˚C
V
CE
=5V
1000
Ta=25˚C
f=1MHz
I
E
=0A
Ic=0A
100
10
50 100 200 500 1000
1
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT :
−I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.5 Gain bandwidth product vs.
emitter current
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
10
5
COLLECTOR CURRENT : I
C
(A)
2
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR CURRENT : I
C
(A)
Ic Max (Pulse)
S
0m
=1
S
m
Pw
00
=1
DC
Ta=25˚C
Single
non-repetitive
pulse
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5 1
Ic Max (Pulse)
DC
Ta=25˚C
Single
non-repetitive
pulse
10
5
2
1
500m
Ic Max (Pulse)
DC
Ta=45˚C
Single
non-repetitive
pulse
=1
Pw
Pw
Pw
S
0m
m
00
=1
S
m
=8
Pw
200m
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2
s
2m
1m
0.1 0.2 0.5 1 2
5 10 20 50100 200 5001000
2
5 10 20 50100200 500
1000
5 10 20 50 100 200 5001000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Safe operating area
(2SD1863)
Fig.8 Safe operating area
(2SD1898)
Fig.9 Safe operating area
(2SD1381F)
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