2SD1407
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT
SC-67
!
Complement to 2SB1016
ABSOLUTE MAXIMUM RATINGS (T
A
=25℃)
℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
Rating
-100
-100
-5
-3
25
150
-50~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
A
=25℃)
℃
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE1
V
CE(sat)
f
T
Test Condition
V
CB
= -150V , I
E
=0
V
EB
= -5V , I
C
=
0
V
CE
= -5.0V ,I
C
=-1.0A
I
C
=-4A ,I
B
=-0.4mA
V
CE
= -10V ,I
C
=-0.5A
Min
Typ
Max
-10
-10
100
-2.0
60
V
MHZ
Unit
µ
A
µ
A
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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