GENERAL DESCRIPTION
Darington transistor are designed for use as
general purpose amplifiers, switching and motor
control applications.
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS
V
BE
= 0V
MIN
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
T
mb
25
I
C
= 4.0A; I
B
= 0.04A
f=16KHZ
I
F
=3A
I
C
=4.0A,I
B1
=-I
B2
=0.04A,V
CC
=100V
-
-
-
-
-
-
2.5
MAX
600
400
6
12
25
2.0
5
6.0
UNIT
V
V
A
A
W
V
A
V
s
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
Tmb 25
MIN
-
-
-
-
-
-
-
-55
-
MAX
600
400
6
12
1
2
25
150
150
UNIT
V
V
A
A
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CE
I
CES
V
CEOsust
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
PARAMETER
Collector cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
V
EB
=0V,V
CE
=V
CESMmax
V
EB
=0V,V
CE
=V
CESMmax
T
j
=125
I
B
=0A,I
C
=100mA
L=25mH
I
C
= 4.0A; I
B
= 0.04A
I
C
= 4.0A; I
B
= 0.04A
I
C
= 2A; V
CE
= 5V
I
F
=3A
I
C
=2A,V
CE
=10V
V
CB
= 50V
I
C
=4.0A,I
B1
=-I
B2
=0.04A,V
CC
=100V
I
C
=4.0A,I
B1
=-I
B2
=0.04A,V
CC
=100V
MIN
MAX
0.5
3.0
UNIT
mA
mA
V
2.0
1.5
600
2.5
5
5.0
50
10
6.0
V
V
V
MHz
pF
s
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
Embedded System
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EEWORLD
