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HM514265DLTT-5

Description
EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, MO-133BA, TSOP2-44/40
Categorystorage    storage   
File Size313KB,33 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HM514265DLTT-5 Overview

EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, MO-133BA, TSOP2-44/40

HM514265DLTT-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTSOP2
package instructionTSOP2, TSOP40/44,.46,32
Contacts44/40
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length18.41 mm
memory density4194304 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP40/44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.0002 A
Maximum slew rate0.18 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
HM514265D Series
HM51S4265D Series
262144-word
×
16-bit Dynamic RAM
ADE-203-581A (Z)
Rev. 1.0
Nov. 28, 1996
Description
The Hitachi HM51(S)4265D Series is a CMOS dynamic RAM organized 262,144-word
×
16-bit.
HM51(S)4265D Series has realized higher density, higher performance and various functions by employing
0.8
µm
CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4265D
Series offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input
permits the HM51(S)4265D to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-
pin plastic TSOPII. Internal refresh timer enables HM51S4265D Series self reflesh operation.
Features
Single 5 V (±5%) (HM51(S)4265D-5/6R)
(±10%) (HM51(S)4265D-6/7/8)
Access time: 50 ns/60 ns/70 ns/80 ns (max)
Power dissipation
Active mode: 945 mW/945 mW/990 mW/825 mW/715 mW (max)
Standby mode: 10.5 mW (max) (HM51(S)4265D-5/6R)
11 mW (max) (HM51(S)4265D-6/7/8)
1.05 mW (max) (L-version) (HM51(S)4265DL-5/6R)
1.1 mW (max) (L-version) (HM51(S)4265DL-6/7/8)
EDO page mode capability
512 refresh cycles : 8 ms
128 ms (L-version)
2 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
2CAS-byte control
Battery backup operation (L-version)
Self refresh operation (HM51S4265D Series)

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