Power Transistors
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
0.7±0.1
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
4.2±0.2
7.5±0.2
s
Features
q
q
q
4.0
High foward current transfer ratio h
FE
High collector to base voltage V
CBO
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
500
400
5
10
6
40
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0±0.5
0.5
–0.1
0.8±0.1
+0.2
2.54±0.25
5.08±0.5
1
2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
3
Internal Connection
C
B
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
E
(T
C
=25˚C)
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
*
Conditions
V
CB
= 350V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 1A, f = 1MHz
min
typ
max
100
Unit
µA
V
V
400
5
500
1.5
2.5
15
V
V
MHz
*
V
CEO(sus)
Test circuit
X
L 10mH
50/60Hz
mercury relay
120Ω
6V
1Ω
15V
Y
G
1
Power Transistors
P
C
— Ta
80
5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
I
B
=8mA
2SD1446, 2SD1446A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=50
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
0
0
20
40
(2)
(3)
(1)
Collector current I
C
(A)
4
3
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
25˚C
T
C
=100˚C
–25˚C
2
1
1.5mA
0
60
80 100 120 140 160
0
1
2
3
4
5
6
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
100000
30000
h
FE
— I
C
10
4
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=2V
I
E
=0
f=1MHz
T
C
=25˚C
10
3
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=50
30
10
3
1
25˚C
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
Forward current transfer ratio h
FE
10000
3000
1000
300
100
25˚C
30
–25˚C
0.1
0.3
1
3
10
T
C
=100˚C
10
2
10
0.1
0.3
1
3
10
10
0.01 0.03
1
0.1
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
100
30
10
2
Non repetitive pulse
T
C
=25˚C
I
CP
t=10µs
I
C
DC
1ms
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
(2)
10
10
3
1
0.3
0.1
0.03
0.01
1
1
10
–1
3
10
30
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Power technology
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