Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
3.2
s
Features
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
High foward current transfer ratio h
FE
High collector to base voltage V
CBO
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
200
150
200
5
10
6
60
3
150
–55 to +150
Unit
V
0.7
21.0±0.5
15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
5.45±0.3
10.9±0.5
1
2
3
0.6±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to
2SD1457
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SD1457A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
B
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
˚C
˚C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(T
C
=25˚C)
Symbol
I
CBO
V
CEO(sus)
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
I
C
= 2A, L = 10mH
I
E
= 0.1A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.06A
I
C
= 3A, I
B
= 0.06A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
15
150
5
700
10000
1.5
2.5
V
V
MHz
min
typ
max
100
Unit
µA
V
V
*
h
FE
Rank classification
Q
P
O
Rank
h
FE
700 to 2500 2000 to 5000 4000 to 10000
1
Power Transistors
P
C
— Ta
100
5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(P
C
=3.0W)
T
C
=25˚C
2SD1457, 2SD1457A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=50
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
T
C
=100˚C
–25˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
80
4
I
B
=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
1
60
(1)
3
40
2
20
(2)
(3)
0
0
25
50
75
100
125
150
0
0
1
2
3
4
5
6
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
100000
I
C
/I
B
=50
h
FE
— I
C
10000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=2V
I
E
=0
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
30
10
3
T
C
=–25˚C
1
100˚C
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
30000
3000
1000
300
100
30
10
3
1
0.1
10000
T
C
=100˚C
3000
1000
25˚C
300
100
30
10
0.01 0.03
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
100
30
10
3
Non repetitive pulse
T
C
=25˚C
t=1ms
I
CP
0.1ms
3
1
0.3
0.1
0.03
0.01
1
3
10
30
I
C
3ms
20ms
DC
R
th(t)
— t
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
10
2
(1)
10
(2)
1
2SD1457A
2SD1457
100
300
1000
10
–1
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
stm32/stm8
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