Transistor
2SD1458
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
1.5
0.4
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
s
Features
q
q
q
1.5 R0.9
R0.9
0.85
0.55±0.1
0.45±0.05
1.25±0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
20
20
15
1.5
0.7
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
2.5
2.5
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*
I
C
= 500mA, I
B
= 50mA
*
V
CB
= 20V, I
E
= –20mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
55
11
*2
min
typ
max
1
10
20
20
15
1000
2500
0.4
4.1±0.2
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
4.5±0.1
7
Unit
µA
µA
V
V
V
V
MHz
15
pF
Pulse measurement
1
Transistor
P
C
— Ta
1.2
240
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
200
2.0
I
B
=100µA
90µA
80µA
70µA
60µA
50µA
80
40µA
30µA
40
20µA
10µA
0
0
40
80
120
160
200
0
0
2
4
6
8
10
0
0
0.4
0.8
2SD1458
I
C
— V
CE
2.4
V
CE
=10V
I
C
— V
BE
Collector power dissipation P
C
(W)
1.0
Collector current I
C
(mA)
0.8
160
Collector current I
C
(A)
1.6
25˚C
Ta=75˚C
–25˚C
0.6
120
1.2
0.4
0.8
0.2
0.4
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=10
3000
h
FE
— I
C
300
V
CE
=10V
f
T
— I
E
V
CB
=10V
Ta=25˚C
Forward current transfer ratio h
FE
2500
Ta=75˚C
25˚C
–25˚C
Transition frequency f
T
(MHz)
0.3
1
3
10
250
2000
200
1500
150
1000
100
500
50
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0
–1
–3
–10
–30
–100 –300 –1000
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
24
Collector output capacitance C
ob
(pF)
20
I
E
=0
f=1MHz
Ta=25˚C
16
12
8
4
0
1
3
10
30
100
Collector to base voltage V
CB
(V)
2
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