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2SD1470

Description
Silicon NPN Epitaxial, Darlington
CategoryDiscrete semiconductor    The transistor   
File Size28KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD1470 Overview

Silicon NPN Epitaxial, Darlington

2SD1470 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSSO-F3
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Base Number Matches1
2SD1470
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
3
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