UNISONIC TECHNOLOGIES CO., LTD
UT4414
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
Power MOSFET
3
2
1
SOT-89
1
SOT-23
(EIAJ SC-59)
The UTC
UT4414
is an N-channel enhancement mode FET with
excellent trench technology to provide customers perfect R
DS(ON)
and
low gate charge. The source leads are separated to allow a Kelvin
connection to the source, which may be used to bypass the source
inductance.
This device can be applied in a load switch or in PWM
applications.
1
TO-252
FEATURES
* V
DSS
= 30V
* I
D
=8.5A @ V
GS
=10V
* R
DS(ON)
≤ 26mΩ @ V
GS
=10V,I
D
=8.5A
* R
DS(ON)
≤ 40mΩ @ V
GS
=4.5V, I
D
=5.0A
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
1
G
G
S
Pin Assignment
2 3 4 5 6 7
S D -
-
-
-
D S -
-
-
-
S S G D D D
8
-
-
D
Packing
Tape Reel
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UT4414L-AE3-R
UT4414G-AE3-R
SOT-23
UT4414L-TN3-R
UT4414G-TN3-R
TO-252
UT4414L-S08-R
UT4414G-S08-R
SOP-8
Note: Pin Assignment: G: Gate
S: Source
D: Drain
UT4414G-AE3-R
(1) Packing Type
(2) Package Type
(3) Green Package
(1) R: Tape Reel
(2) AE3: SOT-23, TN3: TO-252, S08: SOP-8
(3) G: Halogen Free and Lead Free, L: Lead Free
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QW-R502-378.D
UT4414
MARKING
PACKAGE
SOT-23
MARKING
Power MOSFET
4414
L: Lead Free
G: Halogen Free
TO-252
Lot Code
UTC
UT4414
1
8
7
6
5
L: Lead Free
G: Halogen Free
Date Code
SOP-8
UTC
UT4414
1
2
3
4
Date Code
L: Lead Free
G: Halogen Free
Lot Code
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QW-R502-378.D
UT4414
ABSOLUTE MAXIMUM RATING
(T
A
=25°C,
unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy (Note 3)
Power MOSFET
RATINGS
UNIT
30
V
±20
V
8.5
A
50
A
Single Pulsed
11
mJ
SOT-23
1.5
W
Total Power Dissipation
TO-252
P
D
2.5
W
SOP-8
2.1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 0.1mH, I
AS
= 13A, V
DD
= 25V, R
G
= 25Ω, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
83.3
°C/W
Junction to Ambient
TO-252
θ
JA
50
°C/W
SOP-8
59
°C/W
2
Notes: 1. The value of θ
JA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C. The value in any given application depends on the user's specific boar design.
The current rating is based on the t ≤ 10s thermal resistance rating.
2. The θ
JA
is the sum of the thermal impedance from junction to lead θ
JL
and lead to ambient.
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QW-R502-378.D
UT4414
ELECTRICAL CHARACTERISTICS
(T
J
=25°C,
unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
=24V, V
GS
=0V
V
DS
=0V , V
GS
=±20V
V
DS
= V
GS
, I
D
=250µA
V
GS
=10V, I
D
=8.5A
V
GS
=4.5V, I
D
=5.0A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Power MOSFET
MIN
30
TYP
MAX UNIT
V
µA
nA
V
mΩ
mΩ
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
4.3
1
A
V
ns
nC
0.004
1
100
3.0
26
40
1.0
1.9
20
31
420
110
95
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=15V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
V
DS
=0V, V
GS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate-Source Charge
Q
GS
V
DS
=24V, V
GS
=10V, I
D
=8.5A
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DS
=15V, V
GS
=10V, I
D
=8.5A
R
G
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Drain-Source Diode Forward Voltage
V
SD
I
S
=1A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
F
=8.5A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
rr
I
F
=8.5A, dI/dt=100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
3.6
12.4
1.6
2.7
3.6
16
15
19
0.76
204
390
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UT4414
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Voltage
5V
Power MOSFET
30
70
Drain-Source On-Resistance,
R
DS(ON)
(mΩ)
60
50
40
Drain-Source On-Resistance vs.
Gate-Source Voltage
Note:
1.T
A
=25°C
2.Pulse test
Drain Current, I
D
(A)
V
GS
=6~10V
20
4V
3.5V
I
D
=5A
30
20
10
8.5A
10
Note:
1.T
A
=25°C
2.Pulse test
0
0
0.4
0.8
1.2
1.6
2
2
4
6
8
10
Drain-Source Voltage, V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Gate Charge Characteristics
12
1000
V
DS
=24V
V
GS
=10V
I
D
=8.5A
Pulsed
Capacitance Characteristics
Gate-Source Voltage, V
GS
(V)
10
8
6
4
2
0
CISS
Capacitance, C (pF)
100
COSS
CRSS
10
0
5
10
15
Total Gate Charge, Q
G
(nC)
Drain-Source On-Resistance vs.
Junction Temperature
V
GS
=4.5V
I
D
=5A
Pulsed
0
5
10
15
20
25
Drain-Source Voltage, V
DS
(V)
30
2
2
Drain-Source On-Resistance vs.
Junction Temperature
V
GS
=10V
I
D
=8.5A
Pulsed
Drain-Source On-Resistance
Normalized
1.5
Drain-Source On-Resistance
Normalized
75
100
125
150
1.5
1
1
0.5
25
50
0.5
25
50
75
100
125
150
Junction Temperature, T
J
(°C)
Junction Temperature, T
J
(°C)
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