Power Transistors
2SD1474
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
High emitter to base voltage V
EBO
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
100
60
15
12
6
3
40
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
14.0±0.5
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 15V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
I
C
= 5A, I
B
= 0.1A
V
CE
= 12V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
30
0.3
1.5
0.6
60
300
2000
0.5
V
MHz
µs
µs
µs
min
typ
max
100
100
Unit
µA
µA
V
*
h
FE
Rank classification
Q
P
Rank
h
FE
300 to 1200 800 to 2000
1
Power Transistors
P
C
— Ta
80
6
T
C
=25˚C
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
2SD1474
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
10
V
CE(sat)
— I
C
I
C
/I
B
=50
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
0
0
20
40
(2)
(3)
(1)
5
3
Collector current I
C
(A)
I
B
=10mA
4
9mA
8mA
7mA
6mA
5mA
2
4mA
3mA
2mA
1
1mA
0
1
T
C
=100˚C
0.3
25˚C
–25˚C
0.1
3
0.03
60
80 100 120 140 160
0
2
4
6
8
10
12
0.01
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
10
h
FE
— I
C
I
C
/I
B
=50
10
5
V
CE
=2V
1000
300
100
30
10
3
1
0.3
10
0.01 0.03
0.1
0.01 0.03
f
T
— I
C
V
CE
=12V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
3
10
4
1
T
C
=–25˚C
100˚C
T
C
=100˚C
10
3
25˚C
–25˚C
0.3
25˚C
0.1
10
2
0.03
0.01
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=50 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
t
stg
t
f
t
on
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
DC
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
0.1
Switching time t
on
,t
stg
,t
f
(
µs
)
Collector current I
C
(A)
10
3
1
0.3
0.1
0.03
0.01
10
3
1
0.3
0.1
0.03
0.01
t=10ms
0.3
1
3
10
30
100
0
1
2
3
4
5
6
7
8
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
MCU
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