2SD1472
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
1
2
I
D
2 kΩ
(Typ)
0.5 kΩ
(Typ)
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1472
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
E to C diode forward current
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
I
D
Ratings
120
120
7
1.5
3.0
1.0
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Notes: 1. Pluse
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
120
120
7
—
—
2000
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
1.0
10
30000
1.5
2.0
2.0
2.5
3.0
V
V
V
V
V
Unit
V
V
V
µA
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 10 mA, R
BE
=
∞
I
E
= 50 mA, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 100 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 1 A*
1
I
C
= 1 A, I
B
= 1 mA*
1
I
C
= 1.5 A, I
B
= 1.5 mA*
1
I
C
= 1 A, I
B
= 1 mA*
1
I
C
= 1.5 A, I
B
= 1.5 mA*
1
I
D
= 1.5 A*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
h
FE
V
CE(sat)1
V
CE(sat)2
Base to emitter saturation
voltage
V
BE(sat)1
V
BE(sat)2
E to C diode forward voltage
Notes: 1. Pulse test
2. Marking is “CT”.
V
D
2
2SD1472
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Collector Current I
C
(A)
Area of Safe Operation
10
i
C (peak)
3
10
s
ms
0
µ
1
s
0m
1
µs
0.8
1.0
0.3
0.1
0.03
0.01
PW
=1
Ta = 25°C
1 Shot Pulse
0.4
0
50
100
150
Ambient Temperature Ta (°C)
3
10
30
100
300
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
2.0
Ta = 25°C
200
180
160
DC Current Transfer Ratio vs.
Collector Current
30,000
DC Current Transfer Ratio h
FE
Pc = 1
Collector Current I
C
(A)
1.6
10,000
=
75
°
C
W
140
120
1.2
3,000
Ta
0.8
100
µ
A
5
–2
25
V
CE
= 3 V
Pulse
1,000
0.4
I
B
= 0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
300
0.1
0.3
1.0
3
Collector Current I
C
(A)
10
3
2SD1472
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
Base to Emitter Saturation Voltage
V
BE (sat)
(V)
10
200, 500
3
V
BE (sat)
500
1.0
V
CE (sat)
0.3
l
C
/l
B
= 200
Ta = 25°C
0.1
0.1
0.3
1.0
3
Collector Current I
C
(A)
10
Transient Thermal Resistance
300
Thermal Resistance
θ
j-a
(°C/W)
100
30
10
3
1.0
0.3
1m
Ta = 25°C
On the Alumina Ceramic Board (12.5×30×0.7 mm)
10 m
100 m
1
Time t (s)
10
100
1,000
4
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
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