Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
Unit: mm
For low-frequency amplification
0.65±0.15
2.8
–0.3
+0.2
1.5
–0.05
+0.25
0.65±0.15
2.9
–0.05
1.9±0.2
+0.2
q
q
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 20000.
A shunt resistor is omitted from the driver.
(Ta=25˚C)
Ratings
30
60
25
50
5
750
500
200
150
–55 ~ +150
Unit
V
0.95
1
0.95
3
0.4
–0.05
+0.1
2
1.45
s
Features
+0.2
1.1
–0.1
Collector to
base voltage
Collector to
2SD1478
2SD1478A
2SD1478
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SD1478A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :
2N
(2SD1478)
2O
(2SD1478A)
Internal Connection
C
B
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD1478
2SD1478A
2SD1478
2SD1478A
0 to 0.1
Parameter
Symbol
0.1 to 0.3
0.4±0.2
0.8
s
Absolute Maximum Ratings
(Ta=25˚C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
200
*2
E
min
typ
max
100
100
0.16
–0.06
+0.1
Unit
nA
nA
V
30
60
25
50
5
4000
20000
2.5
3.0
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
*1
h
FE1
V
V
MHz
Rank classification
Rank
h
FE1
Q
R
4000 ~ 10000 8000 ~ 20000
2SD1478
2SD1478A
2NQ
2OQ
2NR
2OR
Pulse measurement
Marking
Symbol
1
Transistor
P
C
— Ta
240
1000
300
2SD1478, 2SD1478A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
100
30
10
3
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03
V
CE(sat)
— I
C
I
C
/I
B
=1000
Collector power dissipation P
C
(mW)
200
Collector current I
C
(mA)
100
30
10
3
1
0.3
I
B
=50µA
45µA
40µA
35µA
160
25˚C
Ta=75˚C
120
80
30µA
25µA
20µA
15µA
10µA
5µA
40
0
0
40
80
120
160
200
0.1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
10
5
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=10V
6
I
E
=0
f=1MHz
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=1000
30
10
25˚C
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
10
4
25˚C
Ta=75˚C
5
4
–25˚C
10
3
3
2
10
2
1
0.1
0.3
1
3
10
10
0.01 0.03
0
0.1
0.3
1
3
10
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
2
Embedded System
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