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LL4002GL0

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2
CategoryDiscrete semiconductor    diode   
File Size188KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

LL4002GL0 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2

LL4002GL0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PELF-R2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
LL4001G - LL4007G
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
1A, 50V - 1000V Surface Mount Glass Plassivated Silicon Rectifiers
FEATURES
- Plastic package has carries underwriters
- Ideal for automated placement
- Surge overload rating to 30 Amperes peak
- Reliable low cost construction utilizing molded
plastic technique results in in-expensive product
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MELF
MECHANICAL DATA
Case:
MELF
Molding compound, UL flammability classification rating 94V-0
Mounting position:
Any
Polarity:
Indicated by silver cathode band
Weight:
0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
LL40
01G
50
35
50
LL40
02G
100
70
100
LL40
03G
200
140
200
LL40
04G
400
280
400
1
30
1.1
5
100
15
50
- 65 to +150
- 65 to +150
LL40
05G
600
420
600
LL40
06G
800
560
800
LL40
07G
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
Document Number: DS_S1407007
Version: E15

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