Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1052
Unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
60
60
6
4
2
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
16.7±0.3
14.0±0.5
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Solder Dip
s
Absolute Maximum Ratings
4.0
7.5±0.2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 0.1A
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
20
0.2
3.5
0.7
60
35
70
250
1.2
2
V
V
MHz
µs
µs
µs
min
typ
max
200
300
1
Unit
µA
µA
mA
V
FE2
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE2
1
Power Transistors
P
C
— Ta
40
5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
5
I
B
=100mA
80mA
3
50mA
40mA
2
30mA
20mA
1
5
0
0
25
50
75
100
125
150
(3)
(4)
0
0
2
4
6
8
10
12
10mA
5mA
1mA
0
0
0.5
1.0
1.5
25˚C
T
C
=100˚C
4
–25˚C
2SD1480
I
C
— V
CE
6
V
CE
=4V
I
C
— V
BE
Collector power dissipation P
C
(W)
35
30
25
20
15
10
(2)
(1)
Collector current I
C
(A)
Collector current I
C
(A)
4
3
2
1
2.0
2.5
3.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=10
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
25˚C
10000
h
FE
— I
C
1000
V
CE
=4V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
2
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
I
CP
3
I
C
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
DC
1ms
t=10ms
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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