Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
q
Extremely satisfactory linearity of the forward current transfer
ratio h
FE
Wide area of safe operation (ASO)
High transition frequency f
T
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
100
100
5
8
5
40
2
150
–55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.3A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, f = 1MHz
20
90
20
60
20
1.8
2.0
V
V
MHz
pF
200
min
typ
max
50
50
Unit
µA
µA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
P
100 to 200
Rank
h
FE2
1
Power Transistors
P
C
— Ta
80
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
7
2SD1499
I
C
— V
CE
8
V
CE
=5V
25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
0
0
20
40
(2)
(1)
Collector current I
C
(A)
Collector current I
C
(A)
8
I
B
=100mA
6
80mA
60mA
4
40mA
2
20mA
10mA
6
5
4
3
2
1
0
T
C
=100˚C
–25˚C
(3)
0
60
80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=10
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=100˚C
25˚C
10000
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
–25˚C
–25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
10
2
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
10 I
CP
3
1
DC
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
I
C
10ms
t=1ms
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
(2)
1
10
–1
10
–2
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
NXP MCU
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