Power Transistors
2SD1538, 2SD1538A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1070 and 2SB1070A
10.0±0.3
8.5±0.2
6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s
Features
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
Ratings
40
50
20
40
5
8
4
25
1.3
150
–55 to +150
Unit
V
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1538
2SD1538A
2SD1538
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
8.5±0.2
6.0±0.3
1.5
–0.4
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
A
2.0
3.0
–0.2
A
W
4.4±0.5
0.8±0.1
2.54±0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08±0.5
˚C
˚C
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1538
2SD1538A
2SD1538
2SD1538A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 0.2A, I
B2
= – 0.2A,
V
CC
= 20V
120
0.2
0.5
0.1
20
40
45
90
260
0.5
1.5
V
V
MHz
µs
µs
µs
min
typ
max
50
50
50
Unit
µA
µA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
4.4±0.5
14.7±0.5
Emitter to base voltage
V
10.0±0.3
emitter voltage 2SD1538A
V
+0.4
+0
1
Power Transistors
P
C
— Ta
40
6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=1.3W)
T
C
=25˚C
5
I
B
=60mA
50mA
40mA
30mA
3
20mA
2
10mA
1
5mA
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
2SD1538, 2SD1538A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=10
30
10
3
1
T
C
=100˚C
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
–25˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
35
30
25
20
15
10
5
0
(2)
(3)
(4)
(1)
Collector current I
C
(A)
4
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
10000
I
C
/I
B
=10
h
FE
— I
C
10000
V
CE
=2V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
1000
300
100
–25˚C
30
10
3
1
0.1
T
C
=100˚C
25˚C
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Transition frequency f
T
(MHz)
30
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
— I
C
10
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=–I
B2
)
V
CC
=20V
T
C
=25˚C
t
stg
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
Switching time t
on
,t
stg
,t
f
(
µs
)
3
Collector current I
C
(A)
10 I
CP
I
C
3
300ms
1
0.3
0.1
0.03
10ms
t=1ms
1
0.3
t
on
t
f
0.1
0.03
0.01
0
1
2
3
4
5
6
7
8
0.01
1
3
10
30
2SD1538A
100
2SD1538
300
1000
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
MCU
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