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2SD1559

Description
Silicon NPN Triple Diffused
CategoryDiscrete semiconductor    The transistor   
File Size32KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD1559 Overview

Silicon NPN Triple Diffused

2SD1559 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SD1559
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1079
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
3 kΩ
(Typ)
400
(Typ)
3
2
3
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