2SD1619 datasheet, PDF - EEWORLD Datasheet

2SD1619: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size87KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SD1619 Overview

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN

Parameter Name	Attribute value
Objectid	1481159158
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.3 W
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
VCEsat-Max	0.3 V

	2SD1619	2SB1119
Description	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN	LF Amp,Electronic Governor Applications
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	25 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PSSO-F3	R-PSSO-F3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	PNP
Maximum power consumption environment	1.3 W	1.3 W
Maximum power dissipation(Abs)	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz
VCEsat-Max	0.3 V	0.7 V

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