2SD1616A datasheet, PDF - EEWORLD Datasheet

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2SD1616A: DescriptionNPN SILICON TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size108KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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2SD1616A Overview

NPN SILICON TRANSISTOR

2SD1616A Parametric

Parameter Name	Attribute value
Maker	Micro Electronics
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	45
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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MICRO

ELECTRONICS

2SD1616A

NPN

SILICON

TRANSISTOR

DESCRIPTION

2SD1616A is NPN silicon planar

transistor designed for use in driver and

output stages of AF amplifier, general

purpose application.

4.68

(0.18)

4.6

(0.18)

0.51

(0.02)

TO-92B

3.58

B CE

(0.14)

10

0.4

(0.016)

12.7

(0.5)

min.

2.54

(0.1)

Bottom view

Unit: mm(inch)

0.45

(0.018)

ABSOLUTE MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current Continuous

Total Power Dissipation @ Ta=25

o

C

Operating & Storage Junction Temperature

V

CEO

V

CBO

V

EBO

I

C

P

tot

T

j

,T

stg

60V

120V

6V

1A

0.65W

-55 to +150

o

C

ELECTRICAL CHARACTERISTICS (Ta=25

o

C)

SYMBOL

I

CBO

I

EBO

H

FE *

H

FE *

V

BE *

V

CE(sat) *

V

BE(sat) *

C

ob

Output Capacitance

f

T

Gain Bandwidth Product

Turn-On Time

t

on

t

stg

Storage Time

t

f

Fall Time

* Pulse test PW

≦

350µs, duty cycle

≦

2%.

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

D.C. Current Gain

Base-Emitter Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

MIN

MAX

100

350

700

0.5

1.2

TYP.

UNIT

CONDITIONS

nA V

CB

=60V I

E

=0

nA V

EB

=6V

I

C

=0

V

CE

=2V

I

C

=100mA

V

CE

=2V

I

C

=1A

mV V

CE

=2V

I

C

=50mA

V

I

C

=1A

I

B

=50mA

V

I

C

=1A

I

B

=50mA

pF V

CB

=10V I

E

=0

I

C

=100mA

MHz V

CE

=2V

µs

Vcc=10V I

C

=100mA

µs

I

B1

=-I

B2

=10mA

µs

V

BE(off)

=-2 to 3V

170

45

600

19

100

0.07

0.95

0.07

MICRO ELECTRONICS LTD.

G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.

Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321

HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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