Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN
| Parameter Name | Attribute value |
| Objectid | 1481159191 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JESD-30 code | R-PSSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 1.3 W |
| Maximum power dissipation(Abs) | 0.5 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| VCEsat-Max | 0.3 V |
| 2SD1622 | 2SB1122 | |
|---|---|---|
| Description | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PCP, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PCP, 3 PIN |
| Objectid | 1481159191 | 1481159074 |
| package instruction | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 1 A | 1 A |
| Collector-emitter maximum voltage | 50 V | 50 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 30 |
| JESD-30 code | R-PSSO-F3 | R-PSSO-F3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | PNP |
| Maximum power consumption environment | 1.3 W | 1.3 W |
| Maximum power dissipation(Abs) | 0.5 W | 0.5 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | FLAT | FLAT |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 150 MHz |
| VCEsat-Max | 0.3 V | 0.5 V |
京公网安备 11010802033920号
EEWORLD
