DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4564441, 4564841, 4564163 for Rev. E
64M-bit Synchronous DRAM
4-bank, LVTTL
Description
The
µ
PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access
memories, organized as 4,194,304
×
4
×
4, 2,097,152
×
8
×
4, 1,048,576
×16 ×
4 (word
×
bit
×
bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features
•
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
•
Pulsed interface
•
Possible to assert random column address in every cycle
•
Quad internal banks controlled by A12 and A13 (Bank Select)
•
Byte control (×16) by LDQM and UDQM
•
Programmable Wrap sequence (Sequential / Interleave)
•
Programmable burst length (1, 2, 4, 8 and full page)
•
Programmable /CAS latency (2 and 3)
•
Automatic precharge and controlled precharge
•
CBR (Auto) refresh and self refresh
• ×4, ×8, ×16
organization
•
Single 3.3 V
±
0.3 V power supply
•
LVTTL compatible inputs and outputs
•
4,096 refresh cycles / 64 ms
•
Burst termination by Burst stop command and Precharge command
The information in this document is subject to change without notice.
Document No. M12621EJ8V0DS00 (8th edition)
Date Published October 1998 NS CP (K)
Printed in Japan
The mark
Z
shows major revised points.
©
1997
µ
PD4564441, 4564841, 4564163 for Rev. E
Pin Configurations
/xxx indicates active low signal.
[
µ
PD4564441 ]
54-pin Plastic TSOP (II) (400 mil)
4M words
×
4 bits
×
4 banks
V
CC
NC
V
CC
Q
NC
DQ0
V
SS
Q
NC
NC
V
CC
Q
NC
DQ1
V
SS
Q
NC
V
CC
NC
/WE
/CAS
/RAS
/CS
A13
A12
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Vss
NC
VssQ
NC
DQ3
VccQ
NC
NC
VssQ
NC
DQ2
VccQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
A0 to A13
CLK
CKE
/CS
/RAS
/CAS
/WE
DQM
V
CC
V
SS
V
CC
Q
V
SS
Q
NC
Note
: Address inputs
: Clock input
: Clock enable
: Chip select
: Row address strobe
: Column address strobe
: Write enable
: DQ mask enable
: Supply voltage
: Ground
: Supply voltage for DQ
: Ground for DQ
: No connection
Note
A0 to A11 : Row address inputs
A0 to A9 : Column address inputs
A12, A13 : Bank select
DQ0 to DQ3 : Data inputs / outputs
4
µ
PD4564441, 4564841, 4564163 for Rev. E
[
µ
PD4564841 ]
54-pin Plastic TSOP (II) (400 mil)
2M words
×
8 bits
×
4 banks
V
CC
DQ0
V
CC
Q
NC
DQ1
V
SS
Q
NC
DQ2
V
CC
Q
NC
DQ3
V
SS
Q
NC
V
CC
NC
/WE
/CAS
/RAS
/CS
A13
A12
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Vss
DQ7
VssQ
NC
DQ6
VccQ
NC
DQ5
VssQ
NC
DQ4
VccQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
A0 to A13
CLK
CKE
/CS
/RAS
/CAS
/WE
DQM
V
CC
V
SS
V
CC
Q
V
SS
Q
NC
Note
: Address inputs
: Clock input
: Clock enable
: Chip select
: Row address strobe
: Column address strobe
: Write enable
: DQ mask enable
: Supply voltage
: Ground
: Supply voltage for DQ
: Ground for DQ
: No connection
Note
A0 to A11 : Row address inputs
A0 to A8 : Column address inputs
A12, A13 : Bank select
DQ0 to DQ7 : Data inputs / outputs
5
MEMS sensors
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