UPD45128163G5-A10I-9JF datasheet, PDF

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UPD45128163G5-A10I-9JF: DescriptionSynchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54; Categorystorage storage; File Size887KB，86 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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UPD45128163G5-A10I-9JF Overview

Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54

UPD45128163G5-A10I-9JF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.23 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	MOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD45128163-I

128M-bit Synchronous DRAM

4-bank, LVTTL

WTR (Wide Temperature Range)

Description

The

PD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as

2,097,152

4 (word

bit

bank).

The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

The synchronous DRAM is compatible with Low Voltage TTL (LVTTL).

This product is packaged in 54-pin TSOP (II).

Features

•

Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

•

Pulsed interface

•

Possible to assert random column address in every cycle

•

Quad internal banks controlled by BA0(A13) and BA1(A12)

•

Byte control by LDQM and UDQM

•

Programmable Wrap sequence (Sequential / Interleave)

•

Programmable burst length (1, 2, 4, 8 and full page)

•

Programmable /CAS latency (2 and 3)

•

Ambient temperature (T

−40

to + 85°C

•

Automatic precharge and controlled precharge

•

CBR (Auto) refresh and self refresh

• ×16

organization

•

Single 3.3 V

0.3 V power supply

•

LVTTL compatible inputs and outputs

•

4,096 refresh cycles / 64 ms

•

Burst termination by Burst stop command and Precharge command

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0346N10 (Ver.1.0)

Date Published February 2003 (K) Japan

URL: http://www.elpida.com

Elpida

Memory, Inc. 2003

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

UPD45128163G5-A10I-9JF Related Products

	UPD45128163G5-A10I-9JF	UPD45128163G5-A75LI-9JF	UPD45128163G5-A80LI-9JF	UPD45128163G5-A10LI-9JF	UPD45128163G5-A75I-9JF	UPD45128163G5-A80I-9JF
Description	Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX16, 5.4ns, MOS, PDSO54, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX16, 5.4ns, MOS, PDSO54, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Contacts	54	54	54	54	54	54
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	5.4 ns	6 ns	6 ns	5.4 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	133 MHz	125 MHz	100 MHz	133 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e0	e0	e0	e0	e0	e0
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	54	54	54	54	54	54
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.23 mA	0.24 mA	0.23 mA	0.23 mA	0.24 mA	0.23 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	MOS	MOS	MOS	MOS	MOS	MOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Base Number Matches	1	1	1	1	1	1

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