Power Transistors
2SD1745
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1175
Unit: mm
7.0±0.3
3.0±0.2
3.5±0.2
s
Features
q
q
q
q
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1
0.4±0.1
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of foward current transfer ratio h
FE
Large collector current I
C
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
Ratings
130
80
7
8
4
15
1.3
150
–55 to +150
Unit
V
1.0±0.2
10.0
–0.
+0.3
0.75±0.1
2.3±0.2
4.6±0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5±0.2
2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
3.0±0.2
10.2±0.3
7.2±0.3
V
A
A
1.0 max.
2.5
0.75±0.1
1.1±0.1
0.5 max.
0.9±0.1
0 to 0.15
W
1
2
3
˚C
˚C
2.3±0.2
4.6±0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 3A, I
B
= 0.15A
I
C
= 3A, I
B
= 0.15A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
typ
max
10
50
Unit
µA
µA
V
80
45
90
260
0.5
1.5
30
0.5
2.5
0.15
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
V
V
MHz
µs
µs
µs
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
2.5±0.2
1.0
2.5±0.2
V
1.0
1
Power Transistors
P
C
— Ta
20
8
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
T
C
=25˚C
7
I
B
=300mA
140mA
120mA
100mA
60mA
40mA
3
2
1
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
20mA
10mA
2SD1745
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
10
I
C
/I
B
=20
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
25˚C
–25˚C
T
C
=100˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
15
Collector current I
C
(A)
(1)
6
5
4
10
5
(2)
0
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
10000
I
C
/I
B
=20
h
FE
— I
C
10000
V
CE
=2V
3000
1000
300
100
30
10
3
1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
25˚C
1000
300
100
–25˚C
30
10
3
1
0.01 0.03
T
C
=100˚C
25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
30
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
0.1
Switching time t
on
,t
stg
,t
f
(
µs
)
Collector current I
C
(A)
10
3
1
0.3
t
on
0.1
0.03
0.01
10 I
CP
I
C
3
t=10ms
t
stg
t
f
1ms
1
0.3
0.1
0.03
0.01
300ms
0.3
1
3
10
30
100
0
1
2
3
4
5
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
PCB Design
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