RS5D-T - RS5M-T
Taiwan Semiconductor
5A, 200V-1000V Fast Recovery Surface Mount Rectifier
FEATURES
●
●
●
●
●
●
Glass passivated junction chip
Ideal for automated placement
Low reverse leakage
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F
V
RRM
I
FSM
T
J MAX
Package
VALUE
5
200-1000
164
150
UNIT
A
V
A
°C
APPLICATIONS
● Switch Mode Power Supply
● Inverters and Converters
● Free Wheeling diodes
DO-214AB (SMC)
MECHANICAL DATA
●
●
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1 whisker test
Polarity: Indicated by cathode band
Weight: 0.25 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
DC blocking voltage
Forward current
Surge peak forward
8.3 ms at T
A
= 25°C
current single half sine-
wave superimposed on 1.0 ms at T = 25°C
A
rated load
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F
I
FSM
364
T
J
T
STG
-55 to +150
-55 to +150
A
°C
°C
SYMBOL
RS5D
-T
RS5D
200
140
200
RS5G
-T
RS5G
400
280
400
RS5J
-T
RS5J
600
420
600
5
164
RS5K
-T
RS5K
800
560
800
RS5M
-T
RS5M
1000
700
1000
V
V
V
A
A
UNIT
1
Version:A1907
RS5D-T - RS5M-T
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
TYP
25
54
18
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on PCB (16mm x 16mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
I
F
= 2.5A, T
J
= 25°C
RS5D-T to RS5G-T
I
F
= 5A, T
J
= 25°C
I
F
= 2.5A, T
J
= 25°C
I
F
= 5A, T
J
= 25°C
I
F
= 2.5A, T
J
= 25°C
Forward voltage
(1)
SYMBOL
TYP
0.86
0.93
0.72
0.79
0.91
MAX
-
1.3
-
0.91
-
1.3
-
1.0
-
1.3
-
1.04
10
200
150
250
500
-
-
-
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
ns
ns
ns
pF
pF
pF
RS5J-T
I
F
= 5A, T
J
= 25°C
I
F
= 2.5A, T
J
= 25°C
I
F
= 5A, T
J
= 25°C
I
F
= 2.5A, T
J
= 25°C
V
F
0.98
0.77
0.85
0.97
1.06
0.82
0.91
RS5K-T to RS5M-T
I
F
= 5A, T
J
= 25°C
I
F
= 2.5A, T
J
= 25°C
I
F
= 5A, T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
I
F
=0.5A,I
R
=1.0A,
Irr=0.25A
Reverse current @ rated V
R
(2)
I
R
-
-
-
RS5D-T to RS5G-T
Reverse recovery time
RS5J-T
RS5K-T to RS5M-T
RS5D-T to RS5G-T
Junction capacitance
RS5J-T
RS5K-T to RS5M-T
Notes:
(1) Pulse test with PW=0.3 ms
(2) Pulse test with PW=30 ms
1 MHz, V
R
=4.0V
C
J
t
rr
-
-
57
46
31
ORDERING INFORMATION
ORDERING CODE
RS5X-T R7G
(1)
(1)
PACKAGE
SMC
SMC
SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Plastic reel
3,000 / 13" Paper reel
RS5X-T M6G
RS5X-T R6G
(1)
Notes:
(1) “X” defines voltage from 200V(RS5D-T) to 1000V(RS5M-T)
2
Version:A1907
RS5D-T - RS5M-T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
5
4
3
2
1
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
10.0
1
10
REVERSE VOLTAGE (V)
100
CAPACITANCE (pF)
1000.0
Fig.2 Typical Junction Capacitance
RS5D-T to RS5G-T
RS5J-T
RS5K-T to RS5M-T
100.0
f=1.0MHz
Vsig=50mVp-p
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
100
10
1
0.1
0.01
T
J
=25°C
Fig.4 Typical Forward Characteristics
10 10
INSTANTANEOUS FORWARD CURRENT (A)
RS5D-T to RS5G-T
T
J
=150°C
RS5D-T to RS5G-T
T
J
=150°C
1
UF1DLW
T
J
=125°C
T
J
=125°C
T
J
=25°C
T
J
=25°C
T
J
=125°C
0.01
T
J
=-55°C
Pulse width 300μs
1% duty cycle
Pulse width
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.001
0.4 0.3
0.6 0.5
0.4
0.8 0.7
0.6
1
0.8
0.9
1.2
1
1.1
1.2
FORWARD VOLTAGE (V)
Fig.5 Typical Reverse Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)
100
Fig.6 Typical Forward Characteristics
10
10
RS5J-T
T
J
=150°C
RS5J-T
UF1DLW
T
J
=125°C
J
=125°C
T
T
J
=150°C
10
T
J
=125°C
1
1
1
0.1
T
J
=25°C
0.01
T
J
=-55°C
Pulse width Pulse width
300μs
1% duty cycle
0.4
0.6
0.5
0.6
0.8
0.7
1
0.8
0.9
1.2
1
1.4
1.1
1.2
0.01
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.001
0.1
0.3
0.4
FORWARD VOLTAGE (V)
3
Version:A1907
(A)
0.1
T
J
=25°C
T
J
=25°C
(A)
1 0.1
RS5D-T - RS5M-T
Taiwan Semiconductor
Fig.7 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
T
J
=150°C
10
Fig.8 Typical Forward Characteristics
10
10
RS5K-T to RS5M-T
RS5K-T to RS5M-T
T
J
=150°C
1
UF1DLW
T
T
J
=125°C
J
=125°C
T
J
=125°C
1
0.1
T
J
=25°C
0.01
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
T
J
=-55°C
Pulse width 300μs
Pulse width
1% duty cycle
0.001
0.1
0.4 0.3
0.4
0.6
0.5 0.8 0.6
0.7
1
0.8 1.20.9
1
1.4
1.1
1.2
FORWARD VOLTAGE (V)
Fig.9 Typical Transient Thermal Impedance
TRANSIENT THERMAL IMPEDANCE (°C/W)
100
10
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE DURATION (s)
4
Version:A1907
(A)
1 0.1
T
J
=25°C T
J
=25°C
RS5D-T - RS5M-T
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit:
Millimeters)
DO-214AB (SMC)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
5
Version:A1907
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