MT28C128564W18EBW-F605-P706KBBWT datasheet, PDF

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MT28C128564W18EBW-F605-P706KBBWT: DescriptionSPECIALTY MEMORY CIRCUIT, PBGA77, LEAD FREE, FBGA-77; Categorystorage storage; File Size159KB，15 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT28C128564W18EBW-F605-P706KBBWT Overview

SPECIALTY MEMORY CIRCUIT, PBGA77, LEAD FREE, FBGA-77

MT28C128564W18EBW-F605-P706KBBWT Parametric

Parameter Name	Attribute value
Parts packaging code	BGA
package instruction	LEAD FREE, FBGA-77
Contacts	77
Reach Compliance Code	unknown
Other features	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
JESD-30 code	R-PBGA-B77
JESD-609 code	e1
length	10 mm
memory density	67108864 bit
Memory IC Type	MEMORY CIRCUIT
Number of functions	1
Number of terminals	77
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
surface mount	YES
Temperature level	OTHER
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm
Base Number Matches	1

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PRELIMINARY

‡

128Mb MULTIBANK BURST FLASH

32Mb/64Mb BURST CellularRAM COMBO

FLASH AND CellularRAM

™

COMBO MEMORY

Features

Stacked die Combo package

• Includes two 64Mb Flash devices

• Choice of either one 32Mb or one 64Mb CellularRAMÔ

device

Basic configuration

Flash

• Flexible multibank architecture

• 4 Meg x 16 Async/Page/Burst interface

• Support for true concurrent operations with no latency

CellularRAM

• Low-power, high-density design

• 2 Meg x 16 or 4 Meg x 16 configurations

• Burst

F_V

, V

Q, F_V

, C_V

voltages

• 1.70V (MIN)/1.95V (MAX) F_V

, C_V

• 1.70V (MIN)/2.24V (MAX) V

Q (W18)

• 2.20V (MIN)/3.30V (MAX) V

Q (W30)

• 1.80V (TYP) F_V

(in-system PROGRAM/ERASE)

•

12V ±5% (HV) F_

tolerant (factory programming

MT28C128532W18/W30E

MT28C128564W18/W30E

Low Voltage, Wireless Temperature

Figure 1: 77-Ball FBGA

A18

A19

C_VSS

F_VCC

A21

A11

C_LB#

C_VSS

CLK

RFU

A12

A17

F_VPP

C_WE#

C_CE#

A13

F_WP#

ADV#

A20

A10

A15

C_UB#

F_RST#

F_WE#

A14

A16

DQ8

DQ2

DQ10

DQ5

DQ13

WAIT#

F_CE2#

C_OE#

DQ0

DQ1

DQ3

DQ12

DQ14

DQ7

F_OE2#

F_OE1#

DQ9

DQ11

DQ4

DQ6

DQ15

VCCQ

compatibility)

Fast programming Algorithm (FPA)

Enhanced suspend options

• ERASE-SUSPEND-to-READ within same bank

• PROGRAM-SUSPEND-to-READ within same bank

• ERASE-SUSPEND-to-PROGRAM within same bank

Each Flash contains two 64-bit chip protection registers for

security purposes

100,000 ERASE cycles per block

Cross-compatible command set support

• Extended command set

• Common Flash interface (CFI) compliant

Manufacturer’s Identification Code (ManID)

• Micron

• Intel

F_CE1#

C_VCC

F_VCC

VCCQ

C_CRE

C_VSS

VSSQ

VCCQ

F_VCC

C_VSS

VSSQ

F_VSS

C_VSS

Top View

(Ball Down)

Options

Flash Timing

• 60ns

(W18)

• 70ns (W18/W30)

Flash Burst Frequency

• 66 MHz

(W18)

• 54 MHz (W18/W30)

Flash Boot Block Configuration

• Top/Top

• Top/Bottom

• Bottom/Top

• Bottom/Bottom

CellularRAM Timing

• 70ns

• 85ns

CellularRAM Burst Frequency

• 66 MHz

I/O Voltage Range

• VccQ 1.70V–2.24V (W18)

• VccQ 2.20V–3.30V (W30)

Manufacturer’s Identification Code (ManID)

• Micron (0x2Ch)

• Intel (0x89h)

Operating Temperature Range

• Wireless Temperature (-25°C to +85°C)

Package

• 77-ball FBGA (Standard) 8 x 10 grid

• 77-ball FBGA (Lead-free) 8 x 10 grid

NOTE:

1. Contact factory for availability.

2. Contact factory for details.

09005aef80b10a55

MT28C128564W18E_B.fm - Rev. B, Pub 11/03 EN

‡

PRODUCTS

AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY

MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

PRELIMINARY

128Mb MULTIBANK BURST FLASH

32Mb/64Mb BURST CellularRAM COMBO

Table of Contents

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Device General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Flash General Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Flash Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

CellularRAM General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Part Number Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Valid Part Number Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Device Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Boot Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

MultiChip Packaging Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Unique IDs, State Machines, and Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Flash Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Power Consumption. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Data Sheet Designation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

128Mb Multibank Burst Flash and 32/64Mb Burst CellularRAM Combo Memory

MT28C128564W18E_B.fm - Rev. B, Pub 11/03 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

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