71V3558S133BQI8 datasheet, PDF

71V3558S133BQI8: DescriptionZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165; Categorystorage storage; File Size2MB，29 Pages; ManufacturerIDT (Integrated Device Technology)

Download Datasheet Parametric View All

71V3558S133BQI8 Overview

ZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
Maximum access time	4.2 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e0
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	18
Humidity sensitivity level	3
Number of terminals	165
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.045 A
Minimum standby current	3.14 V
Maximum slew rate	0.31 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components