|
ACR400SE12 |
ACR400SE16 |
ACR400SE18 |
| Description |
Silicon Controlled Rectifier, 380000mA I(T), 1200V V(DRM), |
Silicon Controlled Rectifier, 380000mA I(T), 1600V V(DRM), |
Silicon Controlled Rectifier, 380000mA I(T), 1800V V(DRM), |
| Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
| Reach Compliance Code |
unknown |
unknown |
unknown |
| Nominal circuit commutation break time |
10 µs |
10 µs |
10 µs |
| Critical rise rate of minimum off-state voltage |
1000 V/us |
1000 V/us |
1000 V/us |
| Maximum DC gate trigger current |
500 mA |
500 mA |
500 mA |
| Maximum DC gate trigger voltage |
5 V |
5 V |
5 V |
| Maximum leakage current |
60 mA |
60 mA |
60 mA |
| On-state non-repetitive peak current |
6000 A |
6000 A |
6000 A |
| Maximum on-state current |
380000 A |
380000 A |
380000 A |
| Maximum operating temperature |
125 °C |
125 °C |
125 °C |
| Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
| Off-state repetitive peak voltage |
1200 V |
1600 V |
1800 V |
| surface mount |
NO |
NO |
NO |
| Trigger device type |
SCR |
SCR |
SCR |
| Maker |
- |
Zarlink Semiconductor (Microsemi) |
Zarlink Semiconductor (Microsemi) |