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ACR400SE12

Description
Silicon Controlled Rectifier, 380000mA I(T), 1200V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size200KB,4 Pages
ManufacturerZarlink Semiconductor (Microsemi)
Websitehttp://www.zarlink.com/
Download Datasheet Parametric Compare View All

ACR400SE12 Overview

Silicon Controlled Rectifier, 380000mA I(T), 1200V V(DRM),

ACR400SE12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time10 µs
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current500 mA
Maximum DC gate trigger voltage5 V
Maximum leakage current60 mA
On-state non-repetitive peak current6000 A
Maximum on-state current380000 A
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Off-state repetitive peak voltage1200 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

ACR400SE12 Related Products

ACR400SE12 ACR400SE16 ACR400SE18
Description Silicon Controlled Rectifier, 380000mA I(T), 1200V V(DRM), Silicon Controlled Rectifier, 380000mA I(T), 1600V V(DRM), Silicon Controlled Rectifier, 380000mA I(T), 1800V V(DRM),
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Nominal circuit commutation break time 10 µs 10 µs 10 µs
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 500 mA 500 mA 500 mA
Maximum DC gate trigger voltage 5 V 5 V 5 V
Maximum leakage current 60 mA 60 mA 60 mA
On-state non-repetitive peak current 6000 A 6000 A 6000 A
Maximum on-state current 380000 A 380000 A 380000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Off-state repetitive peak voltage 1200 V 1600 V 1800 V
surface mount NO NO NO
Trigger device type SCR SCR SCR
Maker - Zarlink Semiconductor (Microsemi) Zarlink Semiconductor (Microsemi)

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