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2SD1881

Description
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size86KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SD1881 Overview

Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN

2SD1881 Parametric

Parameter NameAttribute value
Objectid1480823803
Parts packaging codeTO-3PML
package instructionTO-3PML, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)70 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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