Power Transistors
2SD1894
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1254
Unit: mm
15.0±0.3
11.0±0.2
5.0±0.2
3.2
s
Features
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
Optimum for 60W HiFi output
High foward current transfer ratio h
FE
: 5000 to 30000
Low collector to emitter saturation voltage V
CE(sat)
: <2.5V
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
160
140
5
12
7
70
3
150
–55 to +150
Unit
V
V
V
A
A
W
0.7
21.0±0.5
15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
5.45±0.3
10.9±0.5
1
2
3
0.6±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
˚C
˚C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 160V, I
E
= 0
V
CE
= 140V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 6mA
I
C
= 6A, I
B
= 6mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 6A, I
B1
= 6mA, I
B2
= –6mA,
V
CC
= 50V
20
2.5
5.0
2.5
140
2000
5000
30000
2.5
3.0
V
V
MHz
µs
µs
µs
min
typ
max
100
100
100
Unit
µA
µA
µA
V
Rank classification
Q
P
Rank
h
FE2
5000 to 15000 8000 to 30000
1
Power Transistors
P
C
— Ta
80
12
T
C
=25˚C
(1)
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
2SD1894
I
C
— V
CE
100
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=1000
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
10
I
B
=5mA
30
Collector current I
C
(A)
8
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
10
6
3
T
C
=–25˚C
1
25˚C
0.3
100˚C
4
(2)
2
(3)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1mA
0.1
0.1
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=1000
100000
h
FE
— I
C
1000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=5V
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
30000
30
300
10000
10
T
C
=100˚C
3
25˚C
–25˚C
1
100
3000 T
C
=100˚C
1000
25˚C
300
100
30
10
0.01 0.03
–25˚C
30
10
0.3
3
0.1
0.1
1
0.1
0.3
1
3
10
1
3
10
30
100
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
t
on
, t
stg
, t
f
— I
C
100
30
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
I
CP
10
I
C
3
10ms
1
0.3
0.1
0.03
0.01
DC
t=1ms
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3
t
on
t
f
1
0.3
0.1
0.03
0.01
0
4
8
12
16
Collector current I
C
(A)
t
stg
1
3
10
30
100
300
1000
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
R
th(t)
— t
10000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
2SD1894
Thermal resistance R
th
(t) (˚C/W)
1000
100
(1)
10
(2)
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
京公网安备 11010802033920号
EEWORLD
