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M0130RL200

Description
Rectifier Diode, 1 Phase, 1 Element, 130A, 2000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size988KB,11 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric Compare View All

M0130RL200 Overview

Rectifier Diode, 1 Phase, 1 Element, 130A, 2000V V(RRM), Silicon,

M0130RL200 Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codecompliant
applicationSOFT RECOVERY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.64 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current2450 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current130 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
Maximum reverse current20000 µA
Maximum reverse recovery time2.6 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
Date:- 6 Nov, 2014
Data Sheet Issue:- 2
Soft Recovery Diode
Type M0130#L200 to M0130#L250
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2000-2500
2100-2600
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
I
2
t
I
2
t
T
j op
T
stg
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 3)
Peak non-repetitive surge t
p
=10ms, V
RM
=60%V
RRM
, (note 3)
Peak non-repetitive surge t
p
=10ms, V
RM
10V,
(note 3)
I
2
t capacity for fusing t
p
=10ms, V
RM
=60%V
RRM
, (note 3)
I
2
t capacity for fusing t
p
=10ms, V
RM
10V,
(note 3)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
130
55
269
207
2240
2450
25×10
3
30×10
3
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
2
s
A
2
s
°C
°C
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
single phase; 50Hz, 180° half-sinewave.
3)
Half-sinewave, 125°C T
j
initial.
Data Sheet. Types M0130#L200 to M0130#L250 Issue 2
Page 1 of 11
October 2014

M0130RL200 Related Products

M0130RL200 M0130SL250 M0130RL250
Description Rectifier Diode, 1 Phase, 1 Element, 130A, 2000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 130A, 2500V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 130A, 2500V V(RRM), Silicon,
Reach Compliance Code compliant compliant compliant
application SOFT RECOVERY SOFT RECOVERY SOFT RECOVERY
Shell connection ANODE CATHODE ANODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.64 V 1.64 V 1.64 V
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 2450 A 2450 A 2450 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 1 1 1
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 130 A 130 A 130 A
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2000 V 2500 V 2500 V
Maximum reverse current 20000 µA 20000 µA 20000 µA
Maximum reverse recovery time 2.6 µs 2.6 µs 2.6 µs
surface mount NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER
package instruction O-MUPM-D1 O-MUPM-D1 -
Base Number Matches 1 1 -

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