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BU323

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size206KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BU323 Overview

Transistor

BU323 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon Darlington NPN Power Transistor
BU323
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 350V(Min.)
·High
Reliability
APPLICATIONS
·Automotive
ignition
·Switching
regulator
·Motor
control applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
500
UNIT
V
350
8
V
V
10
A
16
3
175
200
-65~200
A
A
W
P
C
T
j
T
stg
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website:www.iscsemi.cn
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