HGTA32N60E2 datasheet, PDF - EEWORLD Datasheet

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HGTA32N60E2: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MO-093AA; CategoryDiscrete semiconductor The transistor; File Size41KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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HGTA32N60E2 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MO-093AA

HGTA32N60E2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T5
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Maximum landing time (tf)	800 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	MO-093AA
JESD-30 code	R-PSFM-T5
JESD-609 code	e0
Number of components	1
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	208 W
Maximum power dissipation(Abs)	208 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Maximum off time (toff)	820 ns
Nominal off time (toff)	630 ns
Nominal on time (ton)	100 ns
VCEsat-Max	2.9 V
Base Number Matches	1

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S E M I C O N D U C T O R

HGTA32N60E2

32A, 600V N-Channel IGBT

Package

JEDEC MO-093AA (5 LEAD TO-218)

5 EMITTER

COLLECTOR

(FLANGE)

4 EMITTER KELVIN

3 COLLECTOR

2 NO CONNECTION

1 GATE

April 1995

Features

• 32A, 600V

• Latch Free Operation

• Typical Fall Time 620ns

• High Input Impedance

• Low Conduction Loss

Description

The IGBT is a MOS gated high voltage switching device

combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between +25

C and +150

IGBTs are ideal for many high voltage switching applications

operating at frequencies where low conduction losses are

essential, such as: AC and DC motor controls, power

supplies and drivers for solenoids, relays and contactors.

PACKAGING AVAILABILITY

PART NUMBER

HGTA32N60E2

PACKAGE

TO-218

BRAND

GA32N60E2

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

EMITTER

KELVIN

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings

= +25

C, Unless Otherwise Speciﬁed

HGTA32N60E2

600

200

±20

±30

200A at 0.8 BV

CES

208

1.67

-55 to +150

260

UNITS

µs

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

Collector-Gate Voltage R

= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CGR

Collector Current Continuous at T

= +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C25

at V

= 15V at T

= +90

C . . . . . . . . . . . . . . . . . . . . . . . . .I

C90

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GES

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GEM

Switching Sage Operating Area T

= +150

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA

Power Dissipation Total at T

= +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating T

> +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

STG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at V

= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

at V

= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junctions temperature.

2. V

CE(PEAK)

= 360V, T

= +125

C, R

= 25Ω.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,969,027

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Harris Corporation 1995

File Number

2833.3

3-116

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