BSM50GAL100D datasheet, PDF - EEWORLD Datasheet

BSM50GAL100D: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES,; CategoryDiscrete semiconductor The transistor; File Size335KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM50GAL100D Overview

Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES,

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	1000 V
Gate-emitter maximum voltage	20 V
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	500 W
VCEsat-Max	3.3 V
Base Number Matches	1

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