Ordering number : ENN8229
MCH6634
N-Channel and P-Channel Silicon MOSFETs
MCH6634
Features
•
General-Purpose Switching Device
Applications
•
•
•
The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance
and ultrahigh-speed switching, thereby enabling high-density mounting.
Excellent ON-resistance characteristics.
1.5V drive.
High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage (*1)
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
2
!0.8mm)
1unit
Conditions
N-channel
30
10
0.7
2.8
0.8
150
--55 to +150
P-channel
--30
--10
--0.4
--1.6
Unit
V
V
A
A
W
°C
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=350mA
ID=350mA, VGS=4V
ID=200mA, VGS=2.5V
ID=10mA, VGS=1.5V
0.4
0.45
0.8
0.7
0.8
1.6
0.9
1.15
2.4
30
1
1
1.3
V
µA
µA
V
S
Ω
Ω
Ω
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : WJ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21805PE TS IM TA-100976 No.8229-1/7
MCH6634
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-
-1mA, VGS=0
VDS=-
-30V, VGS=0
VGS=--8V, VDS=0
VDS=-
-10V, ID=--100µA
VDS=-
-10V, ID=--200mA
ID=-
-200mA, VGS=-
-4V
ID=-
-100mA, VGS=-
-2.5V
ID=-
-10mA, VGS=-
-1.5V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=-
-10V, VGS=-
-4V, ID=--400mA
VDS=-
-10V, VGS=-
-4V, ID=--400mA
VDS=-
-10V, VGS=-
-4V, ID=--400mA
IS=--400mA, VGS=0
--30
--1
--1
--0.4
0.25
0.42
1.5
2.0
4.0
40
8
4.5
10
5
10
5
0.83
0.25
0.17
-
-1.0
--1.5
1.9
2.8
8.0
--1.4
V
µA
µA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=700mA
VDS=10V, VGS=4V, ID=700mA
VDS=10V, VGS=4V, ID=700mA
IS=700mA, VGS=0
Ratings
min
typ
30
7
3.5
8
6
10
8
1
0.4
0.2
0.93
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2173A
0.25
0.3
4
5
6
0.15
Electrical Connection
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
2.1
1.6
0.25
3 2
0.65
2.0
0.07
1
6
5
4
0.85
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
1
2
3
1
2
3
No.8229-2/7
MCH6634
Switching Time Test Circuit
[N-channel]
VIN
4V
0V
VIN
ID=350mA
RL=42Ω
VDD=15V
[P-channel]
VIN
0V
--4V
VIN
ID= --200mA
RL=75Ω
VOUT
VDD= --15V
D
PW=10µs
D.C.≤1%
VOUT
D
PW=10µs
D.C.≤1%
G
G
P.G
50Ω
S
MCH6634
P.G
MCH6634
50Ω
S
0.4
ID -- VDS
V
3.0
[Nch]
--0.30
ID -- VDS
V
[Pch]
2.0V
2.5
V
3.0
2.0
V
4.
6.0V
0V
3.5V
--0.25
Drain Current, ID -- A
Drain Current, ID -- A
0.2
--0.15
6.0
VGS=1.5V
V
4.5
V
--0.20
4.0
0.3
V
3.5
V
2.
5V
VGS=1.5V
--0.10
0.1
--0.05
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Drain-to-Source Voltage, VDS -- V
0.8
IT07510
ID -- VGS
Ta=
--25
°
C
Drain-to-Source Voltage, VDS -- V
--0.50
--0.45
--0.40
IT07653
[Nch]
VDS=10V
75
°
C
ID -- VGS
Ta=
--25
°
C
[Pch]
VDS= --10V
C
Drain Current, ID -- A
Drain Current, ID -- A
C
25
°
--0.30
--0.25
--0.20
0.4
0.2
Ta=
7
C
25
°
--0.05
0
2.0
2.5
3.0
3.5
IT07511
0
--0.5
0
0
0.5
1.0
1.5
25
°
C
--0.10
--1.0
Ta=
75
°
C
--25
°
C
5
°
C
--25
°
C
--0.15
--1.5
--2.0
25
°
--2.5
--0.35
C
--3.0
0.6
75
°
--3.5
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
IT07654
No.8229-3/7
MCH6634
5.0
RDS(on) -- VGS
[Nch]
Ta=25
°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5.0
4.5
RDS(on) -- VGS
[Pch]
Ta=25
°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
4.0
4.0
3.5
3.0
3.0
--200mA
2.5
2.0
1.5
1.0
0.5
2.0
350mA
ID=200mA
ID= --100mA
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS -- V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
--60
IT09228
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
--60
IT09229
[Nch]
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
00m
I D=2
=2.5V
VGS
A,
0m
I D=35
=4.0V
A, V GS
V
--2.5
S=
VG
mA,
-100
-
0V
I D=
= --4.
, V GS
A
200m
I D= --
--40
--20
0
20
40
60
80
100
120
140
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°
C
3
y
fs -- ID
IT09230
Ambient Temperature, Ta --
°
C
1.0
[Nch]
Forward Transfer Admittance,
y
fs -- S
VDS=10V
7
5
3
2
y
fs -- ID
IT09231
[Pch]
VDS= --10V
Forward Transfer Admittance,
y
fs -- S
2
1.0
7
5
3
2
--
Ta=
C
25
°
Ta
0.1
7
5
3
2
C
5
°
--2
=
75
°
C
75
°
25
C
°
C
°
C
25
0.1
7
5
0.01
2
3
5
7
0.1
2
3
5
1.0
IT07514
7
0.01
--0.001
2
3
5 7 --0.01
2
3
5 7 --0.1
2
3
Drain Current, ID -- A
3
2
1.0
IF -- VSD
Drain Current, ID -- A
--1.0
7
5
3
2
--0.1
7
5
3
2
5 7 --1.0
IT07657
[Nch]
VGS=0
IF -- VSD
[Pch]
VGS=0
Forward Current, IF -- A
7
5
3
5
°
C
0.1
7
5
3
2
0.01
0.2
Ta=
7
--25
°
C
2
Forward Current, IF -- A
Ta=7
5
°
C
--0.4
--0.6
--0.01
7
5
3
2
25
°
C
0.4
0.6
0.8
1.0
1.2
1.4
IT07515
--0.001
--0.2
--0.8
--25
°
C
--1.0
25
°
C
--1.2
--1.4
IT09232
Diode Forward Voltage, VSD -- V
Diode Forward Voltage, VSD -- V
No.8229-4/7
MCH6634
3
SW Time -- ID
[Nch]
VDD=15V
VGS=4V
3
SW Time -- ID
[Pch]
VDS= --15V
VGS= --4V
Switching Time, SW Time -- ns
td(off)
10
7
5
Switching Time, SW Time -- ns
2
2
td(off)
10
td(on)
td(on)
tf
tr
7
tr
5
tf
3
3
2
--0.1
2
0.1
2
3
5
7
60
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
1.0
IT07516
2
3
5
7
IT09233
[Nch]
f=1MHz
60
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
[Pch]
50
50
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
40
40
Ciss
30
Ciss
30
20
20
10
Coss
10
0
0
5
Crss
10
15
20
25
30
IT09234
Coss
Crss
0
--5
--10
--15
--20
--25
--30
IT08163
0
Drain-to-Source Voltage, VDS -- V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
VGS -- Qg
VDS=10V
ID=0.7A
[Nch]
VGS -- Qg
VDS= --10V
ID= --0.4A
[Pch]
Gate-to-Source Voltage, VGS -- V
0.9
1.0
Gate-to-Source Voltage, VGS -- V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Total Gate Charge, Qg -- nC
3
IT09235
Total Gate Charge, Qg -- nC
5
IT09236
RDS(on) -- ID
[Nch]
VGS=4V
RDS(on) -- ID
[Pch]
VGS= --4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
2
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
3
2
1.0
7
Ta=75
°
C
25°C
--25
°
C
Ta=75
°
C
25
°
C
--25
°
C
1.0
5
7
3
0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0
IT07519
7
5
--0.01
2
3
5
7
--0.1
2
3
5
Drain Current, ID -- A
--1.0
IT09237
7
No.8229-5/7
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