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BC178B

Description
TRANSISTOR,BJT,PNP,25V V(BR)CEO,200MA I(C),TO-206AA
CategoryDiscrete semiconductor    The transistor   
File Size86KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BC178B Overview

TRANSISTOR,BJT,PNP,25V V(BR)CEO,200MA I(C),TO-206AA

BC178B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codenot_compliant
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)180
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BC177
BC178-BC179
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC177, BC178 and BC179 are silicon planar
epitaxial PNP transistors in TO-18 metal case.They
are suitable for use in driver audio stages, low noise
input audio stages and as low power, high gain
general purpose transistors. The complementary
NPN types are respectively the BC107, BC108 and
BC109.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
P
t o t
T
st g
T
j
January 1989
Parameter
Collector-emitter Voltage (V
BE
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Total Power Dissipation at T
amb
25
°C
Storage Temperature
Junction Temperature
Value
BC177
– 50
– 45
BC178
– 30
– 25
–5
– 100
– 200
300
– 65 to 175
175
BC179
– 25
– 20
Unit
V
V
V
mA
mA
mW
°C
°C
1/6
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