Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
Unit: mm
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
(T
C
=25˚C)
Ratings
60
80
60
80
6
5
3
15
2
150
–55 to +150
Unit
V
18.0±0.5
Solder Dip
0.35±0.1
5.0±0.1
10.0±0.2
1.0
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2137
2SD2137A
2SD2137
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.0±0.2
4.2±0.2
90°
2.5±0.2
1.2±0.1
C1.0
2.25±0.2
0.65±0.1
1.05±0.1
0.55±0.1
0.55±0.1
emitter voltage 2SD2137A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
C1.0
1 2 3
2.5±0.2
2.5±0.2
W
˚C
˚C
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD2137
2SD2137A
2SD2137
2SD2137A
2SD2137
2SD2137A
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 5V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
30
0.3
2.5
0.2
60
80
70
10
1.8
1.2
V
V
MHz
µs
µs
µs
250
min
typ
max
100
100
100
100
100
Unit
µA
µA
µA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
Note: Ordering can be made by the common rank (PQ rank h
FE
= 70 to 250) in the rank classification.
1
Power Transistors
P
C
— Ta
20
6
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
15
(1)
T
C
=25˚C
5
2SD2137, 2SD2137A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=8
30
10
3
1
T
C
=100˚C
0.3
0.1
0.03
0.01
0.01 0.03
–25˚C
25˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
4
I
B
=100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
10
3
2
20mA
5
10mA
1
(2)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
I
C
— V
BE
6
V
CE
=4V
1000
h
FE
— I
C
V
CE
=4V
T
C
=100˚C
25˚C
–25˚C
100
1000
f
T
— I
C
V
CE
=5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
5
300
Transition frequency f
T
(MHz)
0.3
1
3
10
300
Collector current I
C
(A)
4
100
3
T
C
=100˚C
2
25˚C
30
30
10
10
1
–25˚C
3
3
0
0
0.4
0.8
1.2
1.6
2.0
1
0.01 0.03
0.1
1
0.01 0.03
0.1
0.3
1
3
10
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
1000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
t
stg
3
1
0.3
0.1
0.03
t
on
t
f
Area of safe operation (ASO)
100
30
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Switching time t
on
,t
stg
,t
f
(
µs
)
300
Collector current I
C
(A)
10
10
3
1
0.3
0.1
0.03
0.01
I
CP
I
C
10ms
DC
t=1ms
100
30
10
3
1
1
3
10
30
100
0.01
0
1
2
3
4
1
3
10
30
100
2SD2137A
300
2SD2137
1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
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