= −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC228A4
MAC228A6
MAC228A8
MAC228A10
Symbol
V
DRM,
V
RRM
Value
200
400
600
800
8.0
80
26
±2.0
±10
20
0.5
−40 to 110
−40 to 150
8.0
A
A
A
2
s
A
V
W
W
°C
°C
in lb
Unit
V
On-State RMS Current, (T
C
= 80°C) − Full Cycle Sine Wave 50 to 60 Hz
Peak Non−Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, T
J
= 110°C)
Circuit Fusing Considerations, (t = 8.3 ms)
Peak Gate Current, (t
≤
2
ms,
T
C
= 80°C)
Peak Gate Voltage, (t
≤
2
ms,
T
C
= 80°C)
Peak Gate Power, (t
≤
2
ms,
T
C
= 80°C)
Average Gate Power, (t
≤
8.3 ms, T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
I
T(RMS)
I
TSM
I
2
t
I
GM
V
GM
P
GM
P
G(AV)
T
J
T
stg
−
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Value
2.0
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25°C
T
J
= 110°C
ON CHARACTERISTICS
Peak On-State Voltage, (I
TM
=
±11
A Peak, Pulse Width
≤
2 ms, Duty Cycle
≤
2%)
Gate Trigger Current (Continuous DC), (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous DC), (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
Gate Non−Trigger Voltage (Continuous DC), (V
D
= 12 V, T
C
= 110°C, R
L
= 100
W)
All Four Quadrants
Holding Current, (V
D
= 12 Vdc, Initiating Current =
±200
mA, Gate Open)
Gate−Controlled Turn−On Time, (V
D
= Rated V
DRM
, I
TM
= 16 A Peak, I
G
= 30 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage,
(V
D
= Rated V
DRM
, Exponential Waveform, T
C
= 110°C)
Critical Rate of Rise of Commutation Voltage, (V
D
= Rated V
DRM
, I
TM
= 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
C
= 80°C)
dv/dt
dv/dt(c)
−
−
25
5.0
−
−
V/ms
V/ms
V
TM
I
GT
−
−
V
GT
−
−
V
GD
I
H
t
gt
0.2
−
−
−
−
−
−
1.5
2.0
2.5
−
15
−
V
mA
ms
−
−
5.0
10
V
−
−
1.8
V
mA
I
DRM
,
I
RRM
−
−
−
−
10
2.0
mA
mA
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
MAC228A Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC228A Series
110
P(AV), AVERAGE POWER (WATTS)
TC , CASE TEMPERATURE (
°
C)
a
= 30°
60°
90°
98
120°
180°
92
a
a
= CONDUCTION ANGLE
80
0
1.0
2.0
3.0
4.0
5.0
dc
a
10
a
8.0
a
a
= CONDUCTION ANGLE
T
J
≈
110°C
4.0
60°
30°
90°
a
= 180°
120°
dc
104
6.0
86
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
6.0
7.0
8.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
ORDERING INFORMATION
Device
MAC228A4G
MAC228A6G
MAC228A6TG
MAC228A8G
MAC228A8TG
MAC228A10G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
500 Units / Bulk
500 Units / Bulk
50 Units / Rail
500 Units / Bulk
50 Units / Rail
500 Units / Bulk
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4
MAC228A Series
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
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USA/Canada
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Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
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