MAC08BT1, MAC08MT1
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
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•
•
•
•
•
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Pb−Free Packages are Available
TRIAC
0.8 AMPERE RMS
200 thru 600 VOLTS
MT2
G
MT1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
MAC08BT1
T
J
= 25 to
110°C)
MAC08MT1
On−State Current RMS (T
C
= 80°C)
(Full Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25°C)
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
Peak Gate Power
(T
C
= 80°C, Pulse Width
v
1.0
ms)
Average Gate Power
(T
C
= 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
200
600
I
T(RMS)
I
TSM
0.8
8.0
A
A
Value
Unit
V
SOT−223
CASE 318E
STYLE 11
1
A
Y
W
AC08X
=
=
=
=
MARKING
DIAGRAM
4
AYW
AC08x
G
G
2
3
I
2
t
P
GM
P
G(AV)
T
J
T
stg
0.4
5.0
0.1
−40 to +110
−40 to +150
A
2
s
W
W
Assembly Location
Year
Work Week
Device Code
x= B or M
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
°C
°C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
MAC08BT1
Package
SOT−223
SOT−223
(Pb−Free)
SOT−223
SOT−223
(Pb−Free)
Shipping
†
1000 Tape & Reel
1000 Tape & Reel
1000 Tape & Reel
1000 Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
PCB Mounted per Figure 1
Thermal Resistance, Junction−to−Tab
Measured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
Symbol
R
qJA
R
qJT
T
L
Max
156
25
260
Unit
°C/W
°C/W
°C
MAC08BT1G
MAC08MT1
MAC08MT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 5
Publication Order Number:
MAC08BT1/D
MAC08BT1, MAC08MT1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage (Note 2)
(I
T
=
"1.1
A Peak)
Gate Trigger Current (Continuous dc) All Quadrants
(V
D
= 12 Vdc, R
L
= 100
W)
Holding Current (Continuous dc)
(V
D
= 12 Vdc, Gate Open, Initiating Current =
"20
mA)
Gate Trigger Voltage (Continuous dc) All Quadrants
(V
D
= 12 Vdc, R
L
= 100
W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(f = 250 Hz, I
TM
= 1.0 A, Commutating di/dt = 1.5 A/mS
On−State Current Duration = 2.0 mS, V
DRM
= 200 V,
Gate Unenergized, T
C
= 110°C,
Gate Source Resistance = 150
W,
See Figure 10)
Critical Rate−of−Rise of Off State Voltage
(V
pk
= Rated V
DRM
, T
C
= 110°C, Gate Open, Exponential Method)
2. Pulse Test: Pulse Width
≤
300
msec,
Duty Cycle
≤2%.
(dv/dt)
c
1.5
−
−
V/ms
V
TM
I
GT
I
H
V
GT
−
−
−
−
−
−
−
−
1.9
10
5.0
2.0
V
mA
mA
V
T
J
= 25°C
T
J
= 110°C
I
DRM
,
I
RRM
−
−
−
−
10
200
mA
mA
Symbol
Min
Typ
Max
Unit
dv/dt
10
−
−
V/ms
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
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2
MAC08BT1, MAC08MT1
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
0.15
3.8
0.079
2.0
0.091
2.3
0.079
2.0
0.984
25.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
0.091
2.3
0.244
6.2
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.059
1.5
0.096
2.44
0.059
1.5
0.096
2.44
0.472
12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
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3
MAC08BT1, MAC08MT1
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
10
R
θ
JA , JUNCTION TO AMBIENT THERMAL
RESISTANCE,
°
C/W
160
150
140
130
120
110
100
90
80
70
60
50
40
30
TYPICAL
MAXIMUM
DEVICE MOUNTED ON
FIGURE 1 AREA = L
2
PCB WITH TAB AREA
AS SHOWN
L
1.0
4
1 2 3
L
0.1
TYPICAL AT T
J
= 110°C
MAX AT T
J
= 110°C
MAX AT T
J
= 25°C
0
1.0
2.0
3.0
4.0
v
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5.0
MINIMUM
FOOTPRINT = 0.076 cm
2
0
2.0
4.0
6.0
FOIL AREA (cm
2
)
8.0
10
0.01
Figure 2. On-State Characteristics
T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE (
°
C)
Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
110
α
110
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
30°
α
100
90
80
70
60
50
40
30
20
0
MINIMUM FOOTPRINT
50 OR 60 Hz
dc
α
= 180°
120°
100
90
80
70
60
50
40
30
1.0 cm
2
FOIL AREA
50 OR 60 Hz
dc
α
= 180°
120°
60°
90°
30°
α =
CONDUCTION
ANGLE
60°
90°
α
α
α =
CONDUCTION
ANGLE
0.4
0.1
0.2
0.3
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.5
20
0
0.1
0.3
0.4
0.5
0.6
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.2
0.7
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature
T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE (
°
C)
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
110
α
110
30°
T(tab) , MAXIMUM ALLOWABLE
TAB TEMPERATURE (
°
C)
105
dc
α
= 180°
95
120°
90
85
80
REFERENCE:
FIGURE 1
α
α
α =
CONDUCTION
ANGLE
100
90
80
70
4.0 cm
2
FOIL AREA
60
50
dc
α
= 180°
120°
30°
60°
90°
α
α =
CONDUCTION
ANGLE
60°
100
90°
0
0.1
0.3
0.4
0.5
0.6
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.2
0.7
0.8
0
0.1
0.2
0.3
0.4
0.5
0.6
I
T(RMS)
, ON-STATE CURRENT (AMPS)
0.7
0.8
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
Figure 7. Current Derating
Reference: MT2 Tab
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4
MAC08BT1, MAC08MT1
1.0
0.9
P(AV), MAXIMUM AVERAGE
POWER DISSIPATION (WATTS)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.3
0.4
0.5
0.6
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.2
0.7
0.8
0.01
0.0001
0.001
0.01
0.1
1.0
t, TIME (SECONDS)
10
100
α
= 180°
dc
90°
α =
CONDUCTION
ANGLE
α
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
α
120°
30°
60°
0.1
Figure 8. Power Dissipation
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
R
S
1N4007
CHARGE
−
C
S
MT2
1N914 51
W
G
MT1
ADJUST FOR +
dv/dt
(c)
200 V
NON-POLAR
C
L
Note: Component values are for verification of rated (dv/dt)
c
. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)
c
10
80°
60°
10
60 Hz
180 Hz
400 Hz
COMMUTATING dv/dt
dv/dt c , (V/
μ
S)
COMMUTATING dv/dt
dv/dt c , (V/
μ
S)
300 Hz
I
TM
110°
100°
t
w
f=
1
2 t
w
6f I TM
(di dt) c
+
1000
V
DRM
= 200 V
1.0
1.0
V
DRM
10
1.0
60
70
di/dt
c
, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
80
90
100
T
J
, JUNCTION TEMPERATURE (°C)
110
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
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