2SD476K datasheet, PDF - EEWORLD Datasheet

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2SD476K: DescriptionSilicon NPN Triple Diffused; CategoryDiscrete semiconductor The transistor; File Size28KB，5 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SD476K Overview

Silicon NPN Triple Diffused

2SD476K Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	7 MHz
Base Number Matches	1

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2SD476(K), 2SD476A(K)

Silicon NPN Triple Diffused

Application

Power switching complementary pair with 2SB566(K) and 2SB566A(K)

Outline

TO-220AB

2 3

1. Base

2. Collector

(Flange)

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note:

1. Value at T

= 25°C

Symbol

CBO

CEO

EBO

C(peak)

Tstg

2SD476(K)

150

–55 to +150

2SD476A(K)

150

–55 to +150

Unit

°C

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

: http:semiconductor.hitachi.com/

Europe

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

Asia (Taiwan)

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Hitachi Europe GmbH

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Telex: 40815 HITEC HX

2SD476K Related Products

	2SD476K	2SD476	2SD476A	2SD476AK
Description	Silicon NPN Triple Diffused	Silicon NPN Triple Diffused	Silicon NPN Triple Diffused	Silicon NPN Triple Diffused
Reach Compliance Code	unknow	unknown	unknow	unknow
Maximum collector current (IC)	4 A	4 A	4 A	4 A
Configuration	SINGLE	Single	Single	SINGLE
Minimum DC current gain (hFE)	35	35	35	35
Maximum operating temperature	150 °C	140 °C	140 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W
surface mount	NO	NO	NO	NO
Nominal transition frequency (fT)	7 MHz	7 MHz	7 MHz	7 MHz
Base Number Matches	1	-	1	1

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