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BZW04-213HE3/54

Description
Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size86KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

BZW04-213HE3/54 Overview

Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

BZW04-213HE3/54 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage263 V
Minimum breakdown voltage237 V
Breakdown voltage nominal value250 V
Shell connectionISOLATED
Maximum clamping voltage344 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage213 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BZW04-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-204AL (DO-41)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.8 V to 376 V
6.45 V to 462 V
6.45 V to 462 V
400 W
1.5 W
40 A
175 °C
Uni-directional, bi-directional
DO-204AL (DO-41)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BZW04-213(B) to BZW04-376(B) for commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
BZW04P-6V4B).
types,
use
B
suffix
(e.g.
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25 °C unles otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs
waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next table
1.5
40
3.5/5.0
-55 to +175
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for BZW04P(-)188 and below; V = 5.0 V for BZW04P(-)213 and above
F
F
Revision: 02-Dec-13
Document Number: 88316
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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