2SH30
Silicon N Channel IGBT
High Speed Power Switching
ADE-208-792A(Z)
2nd. Edition
May 1999
Features
•
High speed switching
•
Low on-voltage
Outline
TO–3P
C
G
E
1
2
3
1. Gate
2. Collector (Flange)
3. Emitter
2SH30
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Channel temperature
Storage temperature
Note:
1. Value at Tc = 25°C
Symbol
V
CES
V
GES
I
C
ic(peak)
P
C Note1
Tj
Tstg
Ratings
600
±20
50
100
100
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector
current
Gate to emitter leak current
Symbol
I
CES
I
GES
Min
—
—
6.0
—
—
—
—
—
—
Typ
—
—
—
2.1
2800
280
430
300
650
Max
250
±1
8.0
2.6
—
—
—
600
1300
Unit
µA
µA
V
V
pF
ns
ns
ns
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
=
±
20 V, V
CE
= 0
I
C
= 50 mA, V
CE
= 10V
I
C
= 50 A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0
f = 1MHz
I
C
= 50 A
R
L
= 6
Ω
V
GS
=
±15V
Rg = 50
Ω
Gate to emitter cutoff voltage V
GE(off)
Collector to emitter saturation V
CE(sat)
voltage
Input capacitance
Switching time
Cies
t
r
t
on
t
f
t
off
2
2SH30
Main Characteristics
Power vs. Temperature Derating
160
Pch (W)
I
C
(A)
100
30
10
1
m
Maximum Safe Operation Area
10
0
µ
s
120
Channel Dissipation
Collector Current
3
1
0.3
0.1
0.03
Ta = 25
°C
1
DC
Op
s
80
PW
=
ot)
sh
(1
ms
°
C)
10
25
er
ati
on
40
c=
(T
0
0
0.01
50
100
150
200
Case Temperature Tc (°C)
3
10
30
100 300 1000
Collector to Emitter Voltage V
CE
(V)
Reverse Bias SOA
100
I
C
(A)
50
I
C
(A)
20
10
5
2
1
0.5
0.2
0.1
0
Tc = 25
°C
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
0
40
50
Typical Output Characteristics
15 V
12 V
11 V
10 V
Pulse Test
Collector Current
Collector Current
30
20
9V
10
V
GE
= 8 V
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
3
2SH30
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Typical Transfer Characteristics
50
I
C
(A)
5
40
V
CE
= 10 V
Pulse Test
Pulse Test
4
Collector Current
30
Tc = 75°C
20
25°C
10
–25°C
4
8
12
16
V
GE
(V)
20
3
I
C
= 50 A
2
25 A
1
40 A
0
0
Gate to Emitter Voltage
4
8
12
Gate to Emitter Voltage
16
V
GE
(V)
20
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collecot to Emitter Saturation Voltage
vs. Collector Current
10
5
2
–25°C
1
0.5
Tc = 75°C
0.2
V
GE
= 15 V
Pulse Test
1
3
0.3
10
30
Collector Current I
C
(A)
100
25°C
Typical Capacitance vs.
Collecotor to Emitter Voltage
10000
3000
Capacitance C (pF)
1000
300
100
30
Cies
Coes
Cres
10
3
1
V
GE
= 0
f = 1 MHz
0
10
20
30
40
50
Collector to Emitter Voltage V
CE
(V)
0.1
0.1
4
2SH30
Dynamic Input Characteristics
V
CE
(V)
Switching Characteristics
20
V
GE
(V)
500
V
CC
= 200 V
300 V
400 V
V
GE
I
C
= 50 A
V
CC
= 400 V
300 V
200 V
V
CE
0
40
80
120
160
Gate Charge Qg (nc)
1000
500
Switching Time t (ns)
t d(off)
tf
t d(on)
tr
400
16
Collector to Emitter Voltage
300
12
Gate to Emitter Voltage
200
100
50
200
8
100
4
0
200
20
10
1
V
CC
= 300V, V
GE
= ±15 V
Rg = 50
Ω
, Ta = 25°C
50
5
2
10
20
Collector Current I
C
(A)
100
Switching Characteristics
5000
3000
Switching Time t (ns)
Switching Characteristics
1000
tf
Switching Time t (ns)
t d(off)
1000
300
100
30
10
1
tf
tr
t d(on)
I
C
= 50A, R
L
= 6
Ω
V
GE
= ±15 V
100 300 500
3
10
30
Gate Resistance Rg (
Ω
)
500
tr
t d(on)
t d(off)
200
100
50
20
10
25
I
C
= 50A, R
L
= 6
Ω
V
GE
= ±15 V, Rg = 50
Ω
50
75
100
Case Temperature Tc (°C)
125
5
Analog electronics
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