CMLM0574TRLEADFREE datasheet, PDF

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CMLM0574TRLEADFREE: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size587KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLM0574TRLEADFREE Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLM0574TRLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	0.45 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Base Number Matches	1

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CMLM0574

Multi Discrete Module

™

w w w. c e n t r a l s e m i . c o m

SURFACE MOUNT SILICON

N-CHANNEL MOSFET AND

LOW VF SCHOTTKY DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0574

is a Multi Discrete Module™ consisting of a single

N-Channel Enhancement-mode MOSFET and a

Low VF Schottky diode packaged in a space saving

PICOmini™ SOT-563 surface mount case. This

device is designed for small signal general purpose

applications where size and operational efficiency are

prime requirements.

MARKING CODE: 57C

SOT-563 CASE

• Device is

Halogen Free

by design

FEATURES:

• ESD protection up to 2kV

• Low rDS(on) Transistor (560mΩ MAX @ VGS=2.5V)

• Low VF Schottky Diode (0.47V MAX @ 0.5A)

SYMBOL

TJ, Tstg

SYMBOL

VDS

VGS

SYMBOL

VRRM

IFRM

IFSM

350

300

150

-65 to +150

357

UNITS

°C

°C/W

UNITS

APPLICATIONS:

• DC - DC Converters

• Battery Powered Portable Equipment

MAXIMUM RATINGS - CASE:

(TA=25°C)

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

MAXIMUM RATINGS - Q1:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

MAXIMUM RATINGS - D1:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current, tp≤1.0ms

Peak Forward Surge Current, tp= 8.0ms

8.0

450

500

3.5

ELECTRICAL CHARACTERISTICS - Q1:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=8.0V, VDS=0

IDSS

VDS=30V, VGS=0

BVDSS

VGS=0, ID=10μA

VGS(th)

VDS=VGS, ID=250μA

0.5

VSD

VGS=0, IS=400mA

0.5

VGS=4.5V, ID=200mA

280

rDS(ON)

VGS=2.5V, ID=100mA

390

rDS(ON)

VGS=1.8V, ID=75mA

550

gFS

VDS =10V, ID=100mA

200

Notes:

(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

MAX

3.0

1.0

1.1

460

560

730

UNITS

μA

mΩ

R2 (2-August 2011)

CMLM0574TRLEADFREE Related Products

	CMLM0574TRLEADFREE	CMLM0574BK
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	incompatible
Reach Compliance Code	compliant	not_compliant
Configuration	Single	Single
Maximum drain current (Abs) (ID)	0.45 A	0.45 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W	0.35 W
surface mount	YES	YES

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