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C-IXTD12N100

Description
Power Field-Effect Transistor, 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size180KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

C-IXTD12N100 Overview

Power Field-Effect Transistor, 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

C-IXTD12N100 Parametric

Parameter NameAttribute value
package instructionUNCASED CHIP, R-XUUC-N7
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain-source on-resistance1.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N7
Number of components1
Number of terminals7
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
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