Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.2 A |
| Collector-based maximum capacity | 4 pF |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 300 MHz |
| Maximum off time (toff) | 250 ns |
| Maximum opening time (tons) | 70 ns |
| VCEsat-Max | 0.3 V |
| Base Number Matches | 1 |
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