Power Field-Effect Transistor, 1.8A I(D), 100V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLP-3
| Parameter Name | Attribute value |
| Objectid | 1482934382 |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 1.8 A |
| Maximum drain-source on-resistance | 0.55 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 1.5 W |
| Maximum pulsed drain current (IDM) | 7.2 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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