Silicon Junction FETs (Small Signal)
2SJ364
Silicon P-Channel Junction FET
For analog switch
unit: mm
2.1±0.1
s
Features
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s
Absolute Maximum Ratings
(Ta = 25°C)
0.2
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
−20
−10
150
150
−55
to +150
Unit
V
mA
mA
mW
°C
°C
1: Source
2: Drain
3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.1
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 4M
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
Conditions
V
DS
=
−10V,
V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10µA, V
DS
= 0
V
DS
=
−10V,
I
D
=
−10µA
V
DS
=
−10V,
I
D
=
−1mA,
f = 1kHz
V
DS
=
−10mV,
V
GS
= 0
V
DS
=
−10V,
V
GS
= 0, f = 1MHz
1.8
65
1.5
2.5
300
12
4
3.5
min
−
0.2
typ
max
−6
10
Unit
mA
nA
V
V
mS
Ω
pF
pF
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
*
I
DSS
rank classification
Runk
I
DSS
(mA)
O
−
0.2 to
−1
4MO
P
−
0.6 to
−1.5
4MP
Q
−1
to
−3
4MQ
R
−2.5
to
−6
4MR
Marking Symbol
0.15
–0.05
+0.1
0.3
–0
q
Low ON-resistance
q
Low-noise characteristics
+0.1
1
Silicon Junction FETs (Small Signal)
P
D
Ta
200
–4.0
Ta=25˚C
175
–3.5
–2.5
2SJ364
I
D
V
DS
–3.0
V
DS
=–10V
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(mA)
Drain current I
D
(mA)
150
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
0
–2
–4
–6
–8
–10
–12
V
GS
=0V
–2.0
–1.5
0.2V
0.4V
0.6V
0.8V
–1.0
– 0.5
0
0
1
2
3
4
5
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
| Y
fs
|
V
GS
4.0
16
V
DS
=–10V
f=1kHz
Ta=25˚C
| Y
fs
|
I
D
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
24
C
iss
, C
oss
, C
rss
V
DS
V
DS
=–10V
f=1kHz
Ta=25˚C
f=1MHz
V
GS
=0
Ta=25˚C
Forward transfer admittance |Y
fs
| (mS)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
Forward transfer admittance |Y
fs
| (mS)
14
12
10
8
6
4
2
0
20
16
C
iss
12
8
4
C
oss
C
rss
0
–1
–3
–10
–30
–100
1.5
1.0
0.5
0
0
–2
–4
–6
–8
–10
–12
Gate to source voltage V
GS
(V)
Drain current I
D
(mA)
Drain to source voltage V
DS
(V)
2
Analogue and Mixed Signal
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