2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-640A (Z)
2nd. Edition
Jun 1998
Features
•
Low on-resistance
R
DS(on)
= 0.3
Ω
typ.
•
Low drive current
•
4 V gete drive devices
•
High speed switching
Outline
DPAK-1
4
4
D
1 2
G
3
S
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
2SJ527(L),2SJ527(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalenche current
Avalenche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
–60
±20
–5
–20
–5
–5
2.1
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
–60
±20
—
—
–1.0
—
—
1.8
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.3
0.5
3
220
110
35
10
30
45
35
–1.35
55
Max
—
—
–10
±10
–2.0
0.4
0.8
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= –5A, V
GS
= 0
I
F
= –5A, V
GS
= 0
diF/ dt = 50A/µs
Test Conditions
I
D
= –10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±16V,
V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –3A, V
GS
= –10V
Note4
I
D
= –3A, V
GS
= –4V
Note4
I
D
= –3A, V
DS
= –10V
V
DS
= –10V
V
GS
= 0
f = 1MHz
V
GS
= –10V, I
D
= –3A
R
L
= 10Ω
Note4
2
2SJ527(L),2SJ527(S)
Main Characteristics
Power vs. Temperature Derating
40
Pch (W)
I
D
(A)
Maximum Safe Operation Area
–100
–50
10
10
PW
30
–20
–10
–5
–2
–1
–0.5
0
µ
s
µ
s
Channel Dissipation
Drain Current
20
D
=
1
s
m
C
10
0
50
100
150
Tc (°C)
200
Case Temperature
–0.2
Ta = 25
°C
–0.1
–0.1 –0.3
–1 –3
–10 –30 –100
Drain to Source Voltage V
DS
(V)
pe
s (1
ra
sh
(T tion
ot)
c=
Operation in
25
this area is
°
C
limited by R
DS(on)
)
O
10
m
–10 V
–5
–8 V
I
D
(A)
–4
Typical Output Characteristics
–5 V
–6 V
–5
–4 V
(A)
Pulse Test
–3.5 V
–4
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
–3
I
D
Drain Current
–3
Drain Current
–2
–3 V
–1
V
GS
= –2.5 V
0
–2
–4
–6
Drain to Source Voltage
–10
V
DS
(V)
–8
–2
–25°C
–1
Tc = 75°C
25°C
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V
GS
(V)
3
2SJ527(L),2SJ527(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
–4
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
–5
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
3
–3
1
–4 V
0.3
–2
I
D
= –5 A
–1
–1 A
–2 A
V
GS
= –10 V
0.1
–0.1
–0.3
–1
–3
–10
–30
0
–8
–4
–12
Gate to Source Voltage
–16
–20
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25 °C
2
1
0.5
25 °C
75 °C
1.2
I
D
= –4 A
–2 A
V
GS
= –4 V
–5 A
0.8
–1 A
–1, –2 A
0.4
0
–40
–10 V
0
40
80
120
160
Case Temperature Tc (°C)
0.2
0.1
–0.1 –0.2
V
DS
= –10 V
Pulse Test
–0.5 –1
–2
–5
Drain Current I
D
(A)
–10
4
2SJ527(L),2SJ527(S)
Body–Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
Capacitance C (pF)
200
100
50
20
10
5
Ciss
50
Coss
Crss
20
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
2
1
0
10
–0.1 –0.2
–0.5 –1 –2
–5 –10
Reverse Drain Current I
DR
(A)
V
GS
= 0
f = 1 MHz
–10
–20
–30
–40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
0
V
DD
= –10 V
–25 V
–50 V
V
GS
(V)
V
DS
0
100
50
Switching Time t (ns)
Switching Characteristics
t d(off)
tf
–20
–4
I
D
= –5 A
Drain to Source Voltage
–40
–8
Gate to Source Voltage
20
10
5
2
1
–0.1 –0.2
t d(on)
tr
–60
V
GS
–80
V
DD
= –50 V
–25 V
–10 V
–12
–16
–20
20
–100
0
4
8
12
16
Gate Charge Qg (nc)
V
GS
= –10 V, V
DD
= 30 V
duty < 1 %
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
5
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